| 9530740 |
3D interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach |
Kevin J. Lee, Mark Bohr, Andrew W. Yeoh, Christopher M. Pelto, Hiten Kothari +1 more |
2016-12-27 |
| 9449913 |
3D interconnect structure comprising fine pitch single damascene backside metal redistribution lines combined with through-silicon vias |
Kevin J. Lee, Mark Bohr, Andrew W. Yeoh, Christopher M. Pelto, Hiten Kothari +1 more |
2016-09-20 |
| 9142510 |
3D interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach |
Kevin J. Lee, Mark Bohr, Andrew W. Yeoh, Christopher M. Pelto, Hiten Kothari +1 more |
2015-09-22 |
| 7064446 |
Under bump metallization layer to enable use of high tin content solder bumps |
John Barnak, Gerald Feldewerth, Ming Fang, Kevin J. Lee, Tzuen-Luh Huang +3 more |
2006-06-20 |