Issued Patents All Time
Showing 25 most recent of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10998445 | Interlayer dielectric for non-planar transistors | Jeanne Luce | 2021-05-04 |
| 10770591 | Source/drain contacts for non-planar transistors | Subhash M. Joshi, Jin-Sung Chun | 2020-09-08 |
| 10693006 | Interlayer dielectric for non-planar transistors | Jeanne Luce | 2020-06-23 |
| 10283640 | Source/drain contacts for non-planar transistors | Subhash M. Joshi, Jin-Sung Chun | 2019-05-07 |
| 10056488 | Interlayer dielectric for non-planar transistors | Jeanne Luce | 2018-08-21 |
| 10020375 | Tungsten gates for non-planar transistors | Daniel Bergstrom, Jin-Sung Chun, Julia Chiu | 2018-07-10 |
| 9893148 | Method for fabricating a transistor device with a tuned dopant profile | Teymur Bakhishev, Thomas Hoffmann, Sachin R. Sonkusale | 2018-02-13 |
| 9853156 | Source/drain contacts for non-planar transistors | Subhash M. Joshi, Jin-Sung Chun | 2017-12-26 |
| 9812546 | Tungsten gates for non-planar transistors | Daniel Bergstrom, Jin-Sung Chun, Julia Chiu | 2017-11-07 |
| 9637810 | Tungsten gates for non-planar transistors | Daniel Bergstrom, Jin-Sung Chun, Julia Chiu | 2017-05-02 |
| 9634124 | Interlayer dielectric for non-planar transistors | Jeanne Luce | 2017-04-25 |
| 9580776 | Tungsten gates for non-planar transistors | Daniel Bergstrom, Jin-Sung Chun, Julia Chiu | 2017-02-28 |
| 9577041 | Method for fabricating a transistor device with a tuned dopant profile | Teymur Bakhishev, Thomas Hoffmann, Sachin R. Sonkusale | 2017-02-21 |
| 9490347 | Capping dielectric structures for transistor gates | Aaron W. Rosenbaum, Din-How Mei | 2016-11-08 |
| 9425316 | Source/drain contacts for non-planar transistors | Subhash M. Joshi, Jin-Sung Chun | 2016-08-23 |
| 9368624 | Method for fabricating a transistor with reduced junction leakage current | Scott E. Thompson, Lucian Shifren, Pushkar Ranade, Yujie Liu, Sung Hwan Kim +5 more | 2016-06-14 |
| 9299801 | Method for fabricating a transistor device with a tuned dopant profile | Teymur Bakhishev, Thomas Hoffmann, Sachin R. Sonkusale | 2016-03-29 |
| 9202699 | Capping dielectric structure for transistor gates | Aaron W. Rosenbaum, Din-How Mei | 2015-12-01 |
| 9196727 | High uniformity screen and epitaxial layers for CMOS devices | Scott E. Thompson, Lucian Shifren, Pushkar Ranade, Yujie Liu, Sung Hwan Kim +5 more | 2015-11-24 |
| 9177867 | Tungsten gates for non-planar transistors | Daniel Bergstrom, Jin-Sung Chun, Julia Chiu | 2015-11-03 |
| 9112057 | Semiconductor devices with dopant migration suppression and method of fabrication thereof | Dalong Zhao, Lingquan Wang, Pushkar Ranade, Lance Scudder | 2015-08-18 |
| 9105711 | Semiconductor structure with reduced junction leakage and method of fabrication thereof | Lingquan Wang, Teymur Bakhishev, Dalong Zhao, Pushkar Ranade, Thomas Hoffmann +2 more | 2015-08-11 |
| 9087915 | Interlayer dielectric for non-planar transistors | Jeanne Luce | 2015-07-21 |
| 9041126 | Deeply depleted MOS transistors having a screening layer and methods thereof | Thomas Hoffmann, Lucian Shifren, Scott E. Thompson, Pushkar Ranade, Jing Wang +10 more | 2015-05-26 |
| 8981435 | Source/drain contacts for non-planar transistors | Subhash M. Joshi, Jin-Sung Chun | 2015-03-17 |