| 10998445 |
Interlayer dielectric for non-planar transistors |
Jeanne Luce |
2021-05-04 |
$37,420,000 |
| 10770591 |
Source/drain contacts for non-planar transistors |
Subhash M. Joshi, Jin-Sung Chun |
2020-09-08 |
$26,363,000 |
| 10693006 |
Interlayer dielectric for non-planar transistors |
Jeanne Luce |
2020-06-23 |
$27,746,000 |
| 10283640 |
Source/drain contacts for non-planar transistors |
Subhash M. Joshi, Jin-Sung Chun |
2019-05-07 |
$24,403,000 |
| 10056488 |
Interlayer dielectric for non-planar transistors |
Jeanne Luce |
2018-08-21 |
$25,621,000 |
| 10020375 |
Tungsten gates for non-planar transistors |
Daniel Bergstrom, Jin-Sung Chun, Julia Chiu |
2018-07-10 |
$30,438,000 |
| 9893148 |
Method for fabricating a transistor device with a tuned dopant profile |
Teymur Bakhishev, Thomas Hoffmann, Sachin R. Sonkusale |
2018-02-13 |
|
| 9853156 |
Source/drain contacts for non-planar transistors |
Subhash M. Joshi, Jin-Sung Chun |
2017-12-26 |
$14,594,000 |
| 9812546 |
Tungsten gates for non-planar transistors |
Daniel Bergstrom, Jin-Sung Chun, Julia Chiu |
2017-11-07 |
$13,901,000 |
| 9637810 |
Tungsten gates for non-planar transistors |
Daniel Bergstrom, Jin-Sung Chun, Julia Chiu |
2017-05-02 |
$12,076,000 |
| 9634124 |
Interlayer dielectric for non-planar transistors |
Jeanne Luce |
2017-04-25 |
$8,972,000 |
| 9580776 |
Tungsten gates for non-planar transistors |
Daniel Bergstrom, Jin-Sung Chun, Julia Chiu |
2017-02-28 |
$9,011,000 |
| 9577041 |
Method for fabricating a transistor device with a tuned dopant profile |
Teymur Bakhishev, Thomas Hoffmann, Sachin R. Sonkusale |
2017-02-21 |
|
| 9490347 |
Capping dielectric structures for transistor gates |
Aaron W. Rosenbaum, Din-How Mei |
2016-11-08 |
$9,907,000 |
| 9425316 |
Source/drain contacts for non-planar transistors |
Subhash M. Joshi, Jin-Sung Chun |
2016-08-23 |
$16,730,000 |
| 9368624 |
Method for fabricating a transistor with reduced junction leakage current |
Scott E. Thompson, Lucian Shifren, Pushkar Ranade, Yujie Liu, Sung Hwan Kim +5 more |
2016-06-14 |
|
| 9299801 |
Method for fabricating a transistor device with a tuned dopant profile |
Teymur Bakhishev, Thomas Hoffmann, Sachin R. Sonkusale |
2016-03-29 |
|
| 9202699 |
Capping dielectric structure for transistor gates |
Aaron W. Rosenbaum, Din-How Mei |
2015-12-01 |
$16,442,000 |
| 9196727 |
High uniformity screen and epitaxial layers for CMOS devices |
Scott E. Thompson, Lucian Shifren, Pushkar Ranade, Yujie Liu, Sung Hwan Kim +5 more |
2015-11-24 |
|
| 9177867 |
Tungsten gates for non-planar transistors |
Daniel Bergstrom, Jin-Sung Chun, Julia Chiu |
2015-11-03 |
$14,434,000 |
| 9112057 |
Semiconductor devices with dopant migration suppression and method of fabrication thereof |
Dalong Zhao, Lingquan Wang, Pushkar Ranade, Lance Scudder |
2015-08-18 |
|
| 9105711 |
Semiconductor structure with reduced junction leakage and method of fabrication thereof |
Lingquan Wang, Teymur Bakhishev, Dalong Zhao, Pushkar Ranade, Thomas Hoffmann +2 more |
2015-08-11 |
|
| 9087915 |
Interlayer dielectric for non-planar transistors |
Jeanne Luce |
2015-07-21 |
$13,511,000 |
| 9041126 |
Deeply depleted MOS transistors having a screening layer and methods thereof |
Thomas Hoffmann, Lucian Shifren, Scott E. Thompson, Pushkar Ranade, Jing Wang +10 more |
2015-05-26 |
|
| 8981435 |
Source/drain contacts for non-planar transistors |
Subhash M. Joshi, Jin-Sung Chun |
2015-03-17 |
$11,864,000 |
