Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating a transistor device with a tuned dopant profile

Method for fabricating a transistor device with a tuned dopant profile

US Patent 9577041 · Granted Feb 21, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Evaporation-based sample preparation workflow for mass spectrometry2025
Semiconductor layout in FinFET technologies2025
Benzylpyridinium reagent for mass spectrometry2025
Leakage current reduction in electrical isolation gate structures2025
Semiconductor layout in FinFET technologies2023
Leakage current reduction in electrical isolation gate structures2022
Aryl hydrocarbon receptor (AhR) modulator compounds2022
Solar oven positioning2022
Systems and methods for using radio frequency signals and sensors to monitor env2022
Substituted N-hydroxyamidinoheterocycles as modulators of indoleamine 2,3-dioxyg2021
Systems and methods for using radio frequency signals and sensors to monitor env2021
Interlayer dielectric for non-planar transistors2021