Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Source/drain contacts for non-planar transistors

Source/drain contacts for non-planar transistors

US Patent 10283640 · Granted May 7, 2019

Estimated economic value: $24,403,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of producing core-shell particles and multilayer ceramic electronic compo2025
Self-aligned contacts2025
Trench contact structures for advanced integrated circuit structure fabrication2025
Multilayer electronic component2024
Trench contact structures for advanced integrated circuit structure fabrication2024
Self-aligned contacts2024
Substrate processing method2024
Continuous gate and fin spacer for advanced integrated circuit structure fabrica2023
Multilayer electronic component2023
Trench contact structures for advanced integrated circuit structure fabrication2023
Multilayer electronic component2023
Self-aligned contacts2023