Issued Patents All Time
Showing 101–120 of 120 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8501508 | Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains | Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +2 more | 2013-08-06 |
| 8384122 | Tunneling transistor suitable for low voltage operation | Chenming Hu, Anupama Bowonder, Pratik A. Patel, Daniel Chou | 2013-02-26 |
| 8258498 | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains | Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +2 more | 2012-09-04 |
| 8236686 | Dual metal gates using one metal to alter work function of another metal | Byoung Hun Lee, Sang Ho Bae, Kisik Choi, Rino Choi, Craig Huffman +3 more | 2012-08-07 |
| 8237153 | Forming a non-planar transistor having a quantum well channel | Chi On Chui, Wilman Tsai, Jack T. Kavalieros | 2012-08-07 |
| 8178939 | Interfacial barrier for work function modification of high performance CMOS devices | Wei-Yip Loh, Brian Coss | 2012-05-15 |
| 7947971 | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains | Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +2 more | 2011-05-24 |
| 7928426 | Forming a non-planar transistor having a quantum well channel | Chi On Chui, Wilman Tsai, Jack T. Kavalieros | 2011-04-19 |
| 7928468 | Buffer structure for semiconductor device and methods of fabrication | Jack T. Kavalieros, Wilman Tsai | 2011-04-19 |
| 7777282 | Self-aligned tunneling pocket in field-effect transistors and processes to form same | Wilman Tsai, Jack T. Kavalieros, Ravi Pillarisetty, Benjamin Chu-Kung | 2010-08-17 |
| 7763511 | Dielectric barrier for nanocrystals | Kyu S. Min, Wilman Tsai | 2010-07-27 |
| 7759142 | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains | Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +2 more | 2010-07-20 |
| 7696517 | NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric | Hongfa Luan | 2010-04-13 |
| 7687286 | Method and apparatus for determining the thickness of a dielectric layer | — | 2010-03-30 |
| 7629603 | Strain-inducing semiconductor regions | Chi On Chui, Wilman Tsai, Jack T. Kavalieros | 2009-12-08 |
| 7545003 | Defect-free source/drain extensions for MOSFETS having germanium based channel regions | William Tsai, Jack T. Kavalieros | 2009-06-09 |
| 7435987 | Forming a type I heterostructure in a group IV semiconductor | Chi On Chui, Wilman Tsai, Jack T. Kavalieros | 2008-10-14 |
| 7361538 | Transistors and methods of manufacture thereof | Hongfa Luan | 2008-04-22 |
| 7332433 | Methods of modulating the work functions of film layers | Kisik Choi, Husam N. Alshareef | 2008-02-19 |
| 7256056 | Method and apparatus for determining the thickness of a dielectric layer | — | 2007-08-14 |