Issued Patents All Time
Showing 101–125 of 378 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11222982 | Methods and apparatus to form silicon-based transistors on group III-nitride materials using aspect ratio trapping | Sansaptak Dasgupta, Han Wui Then | 2022-01-11 |
| 11218133 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters | Sansaptak Dasgupta, Bruce A. Block, Paul B. Fischer, Han Wui Then | 2022-01-04 |
| 11205717 | Epitaxially fabricated heterojunction bipolar transistors | Sansaptak Dasgupta, Han Wui Then, Paul B. Fischer | 2021-12-21 |
| 11195944 | Gallium nitride (GaN) transistor structures on a substrate | Han Wui Then, Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau | 2021-12-07 |
| 11189700 | Fabrication of wrap-around and conducting metal oxide contacts for IGZO non-planar devices | Van H. Le, Rafael Rios, Gilbert Dewey, Jack T. Kavalieros | 2021-11-30 |
| 11183613 | Group III-nitride light emitting devices including a polarization junction | Han Wui Then, Sansaptak Dasgupta | 2021-11-23 |
| 11177376 | III-N epitaxial device structures on free standing silicon mesas | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-11-16 |
| 11158712 | Field-effect transistors with buried gates and methods of manufacturing the same | Han Wui Then, Paul B. Fischer, Sansaptak Dasgupta | 2021-10-26 |
| 11145648 | Enhancement/depletion device pairs and methods of producing the same | Sansaptak Dasgupta, Han Wui Then, Paul B. Fischer | 2021-10-12 |
| 11133410 | Field-effect transistors and methods of manufacturing the same | Han Wui Then, Sansaptak Dasgupta | 2021-09-28 |
| 11114556 | Gate stack design for GaN e-mode transistor performance | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung | 2021-09-07 |
| 11107764 | Group III-V semiconductor fuses and their methods of fabrication | Han Wui Then, Sansaptak Dasgupta, Tristan A. Tronic, Rajat K. Paul | 2021-08-31 |
| 11101380 | Group III-nitride integrated front-end circuit | Han Wui Then, Sansaptak Dasgupta | 2021-08-24 |
| 11101270 | Techniques and mechanisms for operation of stacked transistors | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Jack T. Kavalieros | 2021-08-24 |
| 11081483 | CMOS circuit with a group III-nitride transistor and method of providing same | Willy Rachmady, Ravi Pillarisetty, Han Wui Then, Sansaptak Dasgupta, Van H. Le | 2021-08-03 |
| 11056532 | Techniques for monolithic co-integration of polycrystalline thin-film bulk acoustic resonator devices and monocrystalline III-N semiconductor transistor devices | Han Wui Then, Sansaptak Dasgupta, Paul B. Fischer, Sanaz K. Gardner, Bruce A. Block | 2021-07-06 |
| 11056449 | Guard ring structures and their methods of fabrication | Han Wui Then, Sansaptak Dasgupta, Paul B. Fischer | 2021-07-06 |
| 11043627 | Techniques for monolithic co-integration of thin-film bulk acoustic resonator devices and III-N semiconductor transistor devices | Han Wui Then, Sansaptak Dasgupta, Paul B. Fischer | 2021-06-22 |
| 11031387 | PN diodes and connected group III-N devices and their methods of fabrication | Han Wui Then, Sansaptak Dasgupta | 2021-06-08 |
| 11031305 | Laterally adjacent and diverse group III-N transistors | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung | 2021-06-08 |
| 11005447 | Microelectronic devices having vertical piezoelectric membranes for integrated RF filters | Paul B. Fischer, Sansaptak Dasgupta, Han Wui Then | 2021-05-11 |
| 10998260 | Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances | Han Wui Then, Sansaptak Dasgupta, Sanaz K. Gardner | 2021-05-04 |
| 10991817 | Group III-N transistors including source to channel heterostructure design | Sansaptak Dasgupta, Han Wui Then | 2021-04-27 |
| 10979012 | Single-flipped resonator devices with 2DEG bottom electrode | Sansaptak Dasgupta, Han Wui Then, Bruce A. Block, Paul B. Fischer | 2021-04-13 |
| 10950733 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2021-03-16 |