Issued Patents All Time
Showing 26–50 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10068780 | Lead frame connected with heterojunction semiconductor body | Gerhard Prechtl, Balamurugan Karunamurthy | 2018-09-04 |
| 10062630 | Water and ion barrier for the periphery of III-V semiconductor dies | Gerhard Prechtl | 2018-08-28 |
| 10038085 | High electron mobility transistor with carrier injection mitigation gate structure | Gilberto Curatola, Gerhard Prechtl, Clemens Ostermaier | 2018-07-31 |
| 9893158 | Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device | Andreas Meiser | 2018-02-13 |
| 9847394 | Semiconductor device | Gerhard Prechtl, Clemens Ostermaier | 2017-12-19 |
| 9837522 | III-nitride bidirectional device | Gerhard Prechtl, Clemens Ostermaier | 2017-12-05 |
| 9825139 | Semiconductor device and method | Gilberto Curatola, Simone Lavanga, Gianmauro Pozzovivo, Fabian Reiher | 2017-11-21 |
| 9793391 | Power MOSFET semiconductor | Joachim Krumrey, Franz Hirler, Walter Rieger | 2017-10-17 |
| 9735078 | Device including multiple semiconductor chips and multiple carriers | Ralf Otremba, Klaus Schiess, Matteo-Alessandro Kutschak | 2017-08-15 |
| 9728630 | High-electron-mobility transistor having a buried field plate | Gerhard Prechtl, Clemens Ostermaier | 2017-08-08 |
| 9646855 | Semiconductor device with metal carrier and manufacturing method | Walter Rieger, Christoph Kadow, Markus Zundel | 2017-05-09 |
| 9647104 | Group III-nitride-based enhancement mode transistor having a heterojunction fin structure | Clemens Ostermaier, Gerhard Prechtl | 2017-05-09 |
| 9620467 | Electronic component | Ralf Otremba, Gerhard Prechtl, Klaus Schiess | 2017-04-11 |
| 9564524 | Semiconductor device and method | Gilberto Curatola, Simone Lavanga, Gianmauro Pozzovivo, Fabian Reiher | 2017-02-07 |
| 9515162 | Surface treatment of semiconductor substrate using free radical state fluorine particles | Maria Reiner, Clemens Ostermaier, Peter Lagger, Gerhard Prechtl, Josef Schellander +2 more | 2016-12-06 |
| 9509284 | Electronic circuit and method for operating a transistor arrangement | Walter Rieger | 2016-11-29 |
| 9484410 | Lateral MOS power transistor having front side drain electrode and back side source electrode | Franz Hirler, Maximilian Roesch | 2016-11-01 |
| 9412834 | Method of manufacturing HEMTs with an integrated Schottky diode | Gerhard Prechtl, Clemens Ostermaier | 2016-08-09 |
| 9406673 | Semiconductor component with transistor | Gilberto Curatola, Walter Rieger, Anthony Sanders | 2016-08-02 |
| 9397208 | Compound semiconductor device | Gilberto Curatola | 2016-07-19 |
| 9349829 | Method of manufacturing a multi-channel HEMT | Clemens Ostermaier, Gerhard Prechtl, Hans Peter Felsl | 2016-05-24 |
| 9305917 | High electron mobility transistor with RC network integrated into gate structure | Gilberto Curatola | 2016-04-05 |
| 9263545 | Method of manufacturing a high breakdown voltage III-nitride device | Clemens Ostermaier, Gerhard Prechtl | 2016-02-16 |
| 9224806 | Edge termination structure with trench isolation regions | Stephan Voss, Alexander Breymesser, Hans-Joachim Schulze, Erich Griebl, Andreas Moser | 2015-12-29 |
| 9202909 | Power MOSFET semiconductor | Joachim Krumrey, Franz Hirler, Walter Rieger | 2015-12-01 |