WR

Wolfgang Raberg

Infineon Technologies Ag: 51 patents #60 of 7,486Top 1%
IBM: 7 patents #14,640 of 70,183Top 25%
AS Altis Semiconductor, Snc: 4 patents #3 of 27Top 15%
QA Qimonda Ag: 4 patents #74 of 575Top 15%
IA Infineon Technologies Austria Ag: 3 patents #336 of 1,126Top 30%
📍 Sauerlach, NY: #1 of 3 inventorsTop 35%
Overall (All Time): #36,777 of 4,157,543Top 1%
62
Patents All Time

Issued Patents All Time

Showing 51–62 of 62 patents

Patent #TitleCo-InventorsDate
7602032 Memory having cap structure for magnetoresistive junction and method for structuring the same Ulrich Klostermann, Chanro Park 2009-10-13
7473656 Method for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks Ulrich Klostermann, Philip L. Trouilloud 2009-01-06
7423282 Memory structure and method of manufacture Chanro Park, Ulrich Klostermann 2008-09-09
7408803 Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method Martin Freitag, Stefan Miethaner 2008-08-05
7344896 Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof Rainer Leuschner, Stephen L. Brown, Frank Findeis, Sivanandha K. Kanakasabapathy, Michael Vieth 2008-03-18
7316933 Method for producing an annular microstructure element Alfred Kersch, Siegfried Schwarzl 2008-01-08
7211446 Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory Michael C. Gaidis, David W. Abraham, Stephen L. Brown, Arunava Gupta, Chanro Park 2007-05-01
7149105 Magnetic tunnel junctions for MRAM devices Stephen L. Brown, Arunava Gupta, Ulrich Klostermann, Stuart Stephen Papworth Parkin, Mahesh G. Samant 2006-12-12
6985384 Spacer integration scheme in MRAM technology Gregory Costrini, John P. Hummel, Kia-Seng Low, Igor Kasko, Frank Findeis 2006-01-10
6977181 MTJ stack with crystallization inhibiting layer 2005-12-20
6638774 Method of making resistive memory elements with reduced roughness 2003-10-28
6567300 Narrow contact design for magnetic random access memory (MRAM) arrays Heinz Hoenigschmid 2003-05-20