Issued Patents All Time
Showing 576–600 of 610 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7268079 | Method for fabricating a semiconductor having a field zone | Elmar Falck, Franz-Josef Niedernostheide, Reiner Barthelmess | 2007-09-11 |
| 7233031 | Vertical power semiconductor component | Anton Mauder, Holger Rüthing, Gerhard Miller, Josef Bauer, Elmar Falck | 2007-06-19 |
| 7195994 | Method for production of deep p regions in silicon, and semiconductor components produced using the method | Franz-Josef Niedernostheide, Helmut Strack | 2007-03-27 |
| 7112868 | IGBT with monolithic integrated antiparallel diode | Armin Willmeroth, Holger Huesken, Erich Griebl | 2006-09-26 |
| 7087981 | Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method | Holger Kapels, Anton Mauder, Helmut Strack, Jenoe Tihanyi | 2006-08-08 |
| 6963088 | Semiconductor component | Uwe Kellner-Werdehausen, Franz-Josef Niedernostheide, Frank Pfirsch | 2005-11-08 |
| 6924177 | Method for producing a thyristor | Daniel Reznik | 2005-08-02 |
| 6914296 | Controllable semiconductor component with multi-section control electrode | Veli Kartal | 2005-07-05 |
| 6838729 | Semiconductor component with enhanced avalanche ruggedness | Andreas Schlögl, Markus Schmitt, Markus Vossebürger, Armin Willmeroth | 2005-01-04 |
| 6815793 | Body of a semiconductor material with a reduced mean free path length | Veli Kartal | 2004-11-09 |
| 6727526 | Thyristor with recovery time voltage surge resistance | Franz-Josef Niedernostheide | 2004-04-27 |
| 6723586 | Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor | Franz-Josef Niedernostheide | 2004-04-20 |
| 6683328 | Power semiconductor and fabrication method | — | 2004-01-27 |
| 6660569 | Method for producing a power semiconductor device with a stop zone | Reiner Barthelmess | 2003-12-09 |
| 6607972 | Method for producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation | Gerald Deboy | 2003-08-19 |
| 6555849 | Deactivatable thyristor | Gottfried Schuh | 2003-04-29 |
| 6504230 | Compensation component and method for fabricating the compensation component | Gerald Deboy, Anton Mauder, Helmut Strack | 2003-01-07 |
| 6489187 | Method for setting the breakover voltage of a thyristor | Franz-Josef Niedernostheide | 2002-12-03 |
| 6441408 | Power semiconductor component for high reverse voltages | Alfred Porst, Helmut Strack, Anton Mauder, Heinrich Brunner, Josef Bauer +1 more | 2002-08-27 |
| 6373079 | Thyristor with breakdown region | Martin Ruff | 2002-04-16 |
| 6351024 | Power semiconductor diode | Martin Ruff | 2002-02-26 |
| 6271545 | Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior | — | 2001-08-07 |
| 6168978 | Method for producing a power semiconductor component on a two-sided substrate that blocks on both sides of the substrate | — | 2001-01-02 |
| 6066542 | Method for the manufacture of a power semiconductor component | Daniel Reznik, Wolfgang Eckhard | 2000-05-23 |
| 6066864 | Thyristor with integrated dU/dt protection | Martin Ruff, Frank Pfirsch | 2000-05-23 |