SH

Shu-Jen Han

IBM: 194 patents #169 of 70,183Top 1%
HL Hefechip Corporation Limited: 6 patents #2 of 16Top 15%
EC Egypt Nanotechnology Center: 2 patents #17 of 29Top 60%
Samsung: 2 patents #37,631 of 75,807Top 50%
ET Elpis Technologies: 1 patents #31 of 121Top 30%
Stanford University: 1 patents #2,251 of 5,197Top 45%
CU Chongqing University: 1 patents #143 of 514Top 30%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
📍 Somers, NY: #1 of 237 inventorsTop 1%
🗺 New York: #134 of 115,490 inventorsTop 1%
Overall (All Time): #3,055 of 4,157,543Top 1%
209
Patents All Time

Issued Patents All Time

Showing 176–200 of 209 patents

Patent #TitleCo-InventorsDate
8680646 Self-aligned carbon electronics with embedded gate electrode Dechao Guo, Keith Kwong Hon Wong, Jun Yuan 2014-03-25
8674412 Contacts-first self-aligned carbon nanotube transistor with gate-all-around Aaron D. Franklin, Joshua T. Smith, Paul M. Solomon 2014-03-18
8642997 Transistor device with reduced gate resistance Alberto Valdes Garcia 2014-02-04
8623717 Side-gate defined tunable nanoconstriction in double-gated graphene multilayers Ching-Tzu Chen 2014-01-07
8624223 Side-gate defined tunable nanoconstriction in double-gated graphene multilayers Ching-Tzu Chen 2014-01-07
8610172 FETs with hybrid channel materials Dechao Guo, Edward W. Kiewra, Kuen-Ting Shiu 2013-12-17
8604519 Self-aligned III-V field effect transistor (FET) and integrated circuit (IC) chip Cheng-Wei Cheng, Kuen-Ting Shiu 2013-12-10
8593180 Circuit including a negative differential resistance (NDR) device having a graphene channel, and method of operating the circuit Yu-Ming Lin, Yanqing Wu 2013-11-26
8569135 Replacement gate electrode with planar work function material layers Dechao Guo, Keith Kwong Hon Wong, Jun Yuan 2013-10-29
8557643 Transistor device with reduced gate resistance Alberto Valdes Garcia 2013-10-15
8536651 Multi-gate transistor having sidewall contacts Josephine B. Chang, Dechao Guo, Chung-Hsun Lin 2013-09-17
8536627 Carbon implant for workfunction adjustment in replacement gate transistor Dechao Guo, Keith Kwong Hon Wong, Jun Yuan 2013-09-17
8524614 III-V compound semiconductor material passivation with crystalline interlayer Kuen-Ting Shiu, Dechao Guo, Edward W. Kiewra, Masaharu Kobayashi 2013-09-03
8519454 Structure and process for metal fill in replacement metal gate integration Dechao Guo, Keith Kwong Hon Wong, Jun Yuan 2013-08-27
8513081 Carbon implant for workfunction adjustment in replacement gate transistor Dechao Guo, Keith Kwong Hon Wong, Jun Yuan 2013-08-20
8471249 Carbon field effect transistors having charged monolayers to reduce parasitic resistance Hsin-Ying Chiu, Hareem T. Maune 2013-06-25
8466493 Self-aligned III-V field effect transistor (FET), integrated circuit (IC) chip with self-aligned III-V FETS and method of manufacture Cheng-Wei Cheng, Kuen-Ting Shiu 2013-06-18
8455862 Self-aligned contacts in carbon devices Josephine B. Chang, Dechao Guo, Chung-Hsun Lin 2013-06-04
8455365 Self-aligned carbon electronics with embedded gate electrode Dechao Guo, Keith Kwong Hon Wong, Jun Yuan 2013-06-04
8445371 Self-aligned contacts Dechao Guo, Wilfried Haensch, Chung-Hsun Lin 2013-05-21
8435878 Field effect transistor device and fabrication Dechao Guo, Chung-Hsun Lin, Yanfeng Wang 2013-05-07
8404539 Self-aligned contacts in carbon devices Josephine B. Chang, Dechao Guo, Chung-Hsun Lin 2013-03-26
8354309 Method of providing threshold voltage adjustment through gate dielectric stack modification Brian J. Greene, Michael P. Chudzik, William K. Henson, Yue Liang, Edward P. Maciejewski +3 more 2013-01-15
8354720 Embedded stressor for semiconductor structures Dechao Guo, Pranita Kulkarni, Philip J. Oldiges 2013-01-15
8338258 Embedded stressor for semiconductor structures Dechao Guo, Pranita Kulkarni, Philip J. Oldiges 2012-12-25