Issued Patents All Time
Showing 426–450 of 826 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9673290 | Self-aligned source and drain regions for semiconductor devices | Joel P. de Souza, Bahman Hekmatshoartabari, Jeehwan Kim, Siegfried Maurer | 2017-06-06 |
| 9667032 | Plasmonic mode III-V laser as on-chip light source | Ning Li, Ke Liu, Volker J. Sorger | 2017-05-30 |
| 9666742 | Solar cell structures having III-V base layers | Stephen W. Bedell, Bahman Hekmatshoartabari, Davood Shahrjerdi | 2017-05-30 |
| 9660069 | Group III nitride integration with CMOS technology | Can Bayram, Christopher P. D'Emic, William J. Gallagher, Effendi Leobandung | 2017-05-23 |
| 9660116 | Nanowires formed by employing solder nanodots | Keith E. Fogel, Jeehwan Kim, Jae-Woong Nah, Kuen-Ting Shiu | 2017-05-23 |
| 9659807 | Method of forming a flexible semiconductor layer and devices on a flexible carrier | Stephen W. Bedell, Katherine L. Saenger, Abdelmajid Salhi | 2017-05-23 |
| 9653570 | Junction interlayer dielectric for reducing leakage current in semiconductor devices | Joel P. de Souza, Keith E. Fogel, Jeehwan Kim, Brent A. Wacaser | 2017-05-16 |
| 9654004 | 3D integrated DC-DC power converters | Hariklia Deligianni, Edmund J. Sprogis, Naigang Wang | 2017-05-16 |
| 9653308 | Epitaxial lift-off process with guided etching | Cheng-Wei Cheng, Ning Li, Leathen Shi, Kuen-Ting Shiu | 2017-05-16 |
| 9646832 | Porous fin as compliant medium to form dislocation-free heteroepitaxial films | Kangguo Cheng, Keith E. Fogel, Jeehwan Kim | 2017-05-09 |
| 9647063 | Nanoscale chemical templating with oxygen reactive materials | Maha M. Khayyat, Brent A. Wacaser | 2017-05-09 |
| 9640699 | Interdigitated back contact heterojunction photovoltaic device | Tze-Chiang Chen, Bahman Hekmatshoartabari, Davood Shahrjerdi | 2017-05-02 |
| 9634164 | Reduced light degradation due to low power deposition of buffer layer | Keith E. Fogel, Augustin J. Hong, Jeehwan Kim | 2017-04-25 |
| 9620592 | Doped zinc oxide and n-doping to reduce junction leakage | Joel P. de Souza, Keith E. Fogel, Jeehwan Kim, Siegfried Maurer | 2017-04-11 |
| 9608160 | Polarization free gallium nitride-based photonic devices on nanopatterned silicon | Can Bayram, Cheng-Wei Cheng, Tayfun Gokmen, Ning Li, John A. Ott +1 more | 2017-03-28 |
| 9607854 | Methods to reduce debonding forces on flexible semiconductor films disposed on vapor-releasing adhesives | Stephen W. Bedell, Katherine L. Saenger, Abdelmajid Salhi | 2017-03-28 |
| 9601476 | Optoelectronics and CMOS integration on GOI substrate | Effendi Leobandung, Ning Li | 2017-03-21 |
| 9601624 | SOI based FINFET with strained source-drain regions | Stephen W. Bedell, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek, Dominic J. Schepis | 2017-03-21 |
| 9601583 | Hetero-integration of III-N material on silicon | Can Bayram, Christopher P. D'Emic, Jeehwan Kim | 2017-03-21 |
| 9601482 | Economical and environmentally friendly chemical mechanical polishing for III-V compound semiconductor device fabrication | Keith E. Fogel, Alexander Reznicek, Charan V. Surisetty | 2017-03-21 |
| 9595805 | III-V photonic integrated circuits on silicon substrate | Cheng-Wei Cheng, Ning Li, Kuen-Ting Shiu | 2017-03-14 |
| 9590393 | Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth | Cheng-Wei Cheng, Ning Li, Kuen-Ting Shiu | 2017-03-07 |
| 9588289 | Cointegration of optical waveguides, microfluidics, and electronics on sapphire substrates | Yann Astier, Ning Li, Joshua T. Smith, William T. Spratt | 2017-03-07 |
| 9583562 | Reduction of defect induced leakage in III-V semiconductor devices | Joel P. de Souza, Jeehwan Kim, Brent A. Wacaser | 2017-02-28 |
| 9576837 | Method of forming a flexible semiconductor layer and devices on a flexible carrier | Stephen W. Bedell, Katherine L. Saenger, Abdelmajid Salhi | 2017-02-21 |