Issued Patents All Time
Showing 26–50 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9773884 | III-nitride transistor with engineered substrate | Zijan Ray Li, Karim S. Boutros | 2017-09-26 |
| 9761709 | III-nitride transistor with enhanced doping in base layer | — | 2017-09-12 |
| 9761438 | Method for manufacturing a semiconductor structure having a passivated III-nitride layer | Xu Chen | 2017-09-12 |
| 9691909 | Current aperture diode and method of fabricating the same | — | 2017-06-27 |
| 9646839 | Ta based ohmic contact | Mary Y. Chen | 2017-05-09 |
| 9559012 | Gallium nitride complementary transistors | Yu Cao | 2017-01-31 |
| 9496137 | Methods of forming reverse side engineered III-nitride devices | Umesh Mishra, Rakesh K. Lal | 2016-11-15 |
| 9419122 | Etch-based fabrication process for stepped field-plate wide-bandgap | Andrea Corrion, Keisuke Shinohara, Miroslav Micovic, David F. Brown, Adam J. Williams +2 more | 2016-08-16 |
| 9373699 | Semiconductor devices with field plates | Robert Coffie | 2016-06-21 |
| 9337332 | III-Nitride insulating-gate transistors with passivation | Mary Y. Chen, Xu Chen, Zijian Li, Karim S. Boutros | 2016-05-10 |
| 9202880 | Etch-based fabrication process for stepped field-plate wide-bandgap | Andrea Corrion, Keisuke Shinohara, Miroslav Micovic, David F. Brown, Adam J. Williams +2 more | 2015-12-01 |
| 9142626 | Stepped field plate wide bandgap field-effect transistor and method | Andrea Corrion, Keisuke Shinohara, Miroslav Micovic, David F. Brown, Alexandros Margomenos +1 more | 2015-09-22 |
| 9117935 | Current aperture diode and method of fabricating same | — | 2015-08-25 |
| 9111961 | Semiconductor devices with field plates | Robert Coffie | 2015-08-18 |
| 9077335 | Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops | Brian J. Hughes, Karim S. Boutros, Daniel M. Zehnder, Sameh G. Khalil | 2015-07-07 |
| 9059200 | III-Nitride metal-insulator-semiconductor field-effect transistor | David F. Brown, Xu Chen, Adam J. Williams, Karim S. Boutros | 2015-06-16 |
| 9041065 | Semiconductor heterostructure diodes | Yifeng Wu, Umesh Mishra, Primit Parikh, Ilan Ben-Yaacov, Likun Shen | 2015-05-26 |
| 8941118 | Normally-off III-nitride transistors with high threshold-voltage and low on-resistance | David F. Brown, Adam J. Williams | 2015-01-27 |
| 8853709 | III-nitride metal insulator semiconductor field effect transistor | David F. Brown, Xu Chen, Adam J. Williams, Karim S. Boutros | 2014-10-07 |
| 8692294 | Semiconductor devices with field plates | Robert Coffie | 2014-04-08 |
| 8653559 | AlGaN/GaN hybrid MOS-HFET | Andrea Corrion, Karim S. Boutros, Mary Y. Chen, Samuel J. Kim, Shawn D. Burnham | 2014-02-18 |
| 8530978 | High current high voltage GaN field effect transistors and method of fabricating same | Zijian Li, Karim S. Boutros, Shawn D. Burnham | 2013-09-10 |
| 8390000 | Semiconductor devices with field plates | Robert Coffie | 2013-03-05 |
| 8389977 | Reverse side engineered III-nitride devices | Umesh Mishra, Rakesh K. Lal | 2013-03-05 |
| 8237198 | Semiconductor heterostructure diodes | Yifeng Wu, Primit Parikh, Umesh Mishra, Ilan Ben-Yaacov, Likun Shen | 2012-08-07 |