Issued Patents All Time
Showing 51–75 of 113 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7936027 | Method of MRAM fabrication with zero electrical shorting | Rongfu Xiao, Tom Zhong, Witold Kula | 2011-05-03 |
| 7918014 | Method of manufacturing a CPP structure with enhanced GMR ratio | Kunliang Zhang, Min Li, Yu-Hsia Chen | 2011-04-05 |
| 7919407 | Method of high density field induced MRAM process | Tom Zhong, Wai-Ming J. Kan, Daniel Liu, Adam Zhong | 2011-04-05 |
| 7884433 | High density spin-transfer torque MRAM process | Tom Zhong, Rongfu Xiao, Adam Zhong, Wai-Ming J. Kan, Daniel Liu | 2011-02-08 |
| 7863060 | Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices | Rodolfo P. Belen, Tom Zhong, Witold Kula | 2011-01-04 |
| 7804706 | Bottom electrode mask design for ultra-thin interlayer dielectric approach in MRAM device fabrication | Tom Zhong, Rongfu Xiao | 2010-09-28 |
| 7750421 | High performance MTJ element for STT-RAM and method for making the same | Cheng T. Horng, Ru-Ying Tong, Witold Kula | 2010-07-06 |
| 7742261 | Tunneling magneto-resistive spin valve sensor with novel composite free layer | Tong Zhao, Hui-Chuan Wang | 2010-06-22 |
| 7713755 | Field angle sensor fabricated using reactive ion etching | Rongfu Xiao, Ruth Tong, Witold Kula | 2010-05-11 |
| 7696551 | Composite hard mask for the etching of nanometer size magnetic multilayer based device | Rongfu Xiao, Tom Zhang, Witold Kula, Adam Yu Zhang | 2010-04-13 |
| 7688555 | Hard bias design for extra high density recording | Kunliang Zhang, Yun-Fei Li, Chen-Jung Chien | 2010-03-30 |
| 7672093 | Hafnium doped cap and free layer for MRAM device | Cheng T. Horng, Ru-Ying Tong, Witold Kula | 2010-03-02 |
| 7663131 | SyAF structure to fabricate Mbit MTJ MRAM | Cheng T. Horng, Ru-Ying Tong, Guangli Liu | 2010-02-16 |
| 7630176 | Seed layer for fabricating spin valve heads for ultra-high density recordings | Cheng T. Horng, Hui-Chuan Wang, Ru-Ying Tong | 2009-12-08 |
| 7602590 | Tunneling magneto-resistive spin valve sensor with novel composite free layer | Tong Zhao, Hui-Chuan Wang | 2009-10-13 |
| 7583481 | FCC-like trilayer AP2 structure for CPP GMR EM improvement | Kunliang Zhang, Dan Abels, Min Li, Chen-Jung Chien, Yu-Hsia Chen | 2009-09-01 |
| 7564658 | CoFe insertion for exchange bias and sensor improvement | Kunliang Zhang, Hui-Chuan Wang, Tong Zhao, Min Li | 2009-07-21 |
| 7529067 | Exchange bias structure for abutted junction GMR sensor | Yun-Fei Li, Hui-Chuan Wang, Cherng-Chyi Han, Mao-Min Chen | 2009-05-05 |
| 7515388 | Composite hard bias design with a soft magnetic underlayer for sensor applications | Kunliang Zhang, Mao-Min Chen, Min Li, Chen-Jung Chien | 2009-04-07 |
| 7508700 | Method of magnetic tunneling junction pattern layout for magnetic random access memory | Tom Zhong, Terry Kin Ting Ko, Wai-Ming J. Kan, Adam Zhong | 2009-03-24 |
| 7446987 | Composite hard bias design with a soft magnetic underlayer for sensor applications | Kunliang Zhang, Mao-Min Chen, Min Li, Chen-Jung Chien | 2008-11-04 |
| 7431961 | Composite free layer for CIP GMR device | Tong Zhao, Hui-Chuan Wang, Yun-Fei Li | 2008-10-07 |
| 7390530 | Structure and process for composite free layer in CPP GMR device | Hui-Chuan Wang, Min Li, Tong Zhao, Kunliang Zhang | 2008-06-24 |
| 7377025 | Method of forming an improved AP1 layer for a TMR device | Tong Zhao, Hui-Chuan Wang | 2008-05-27 |
| 7358100 | Bottom conductor for integrated MRAM | Wei Cao, Cheng T. Horng, Ruying Tong, Chen-Jung Chien, Liubo Hong | 2008-04-15 |