WK

Wai-Ming J. Kan

MT Magic Technologies: 9 patents #11 of 54Top 25%
HT Headway Technologies: 2 patents #181 of 309Top 60%
W( Western Digital (Fremont): 1 patents #299 of 473Top 65%
Overall (All Time): #419,413 of 4,157,543Top 15%
12
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9343463 Method of high density memory fabrication Tom Zhong, Adam Zhong, Chyu-Jiuh Torng 2016-05-17
9196283 Method for providing a magnetic recording transducer using a chemical buffer Masahiro Osugi, Lily Yao, Ming Jiang, Guanghong Luo 2015-11-24
8969982 Bottom electrode for MRAM device Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong +4 more 2015-03-03
8324698 High density spin-transfer torque MRAM process Tom Zhong, Chyu-Jiuh Torng, Rongfu Xiao, Adam Zhong, Daniel Liu 2012-12-04
8273666 Process to fabricate bottom electrode for MRAM device Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong +4 more 2012-09-25
8183061 High density spin-transfer torque MRAM process Tom Zhong, Chyu-Jiuh Torng, Rongfu Xiao, Adam Zhong, Daniel Liu 2012-05-22
8169816 Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory Tai Min, David Heim, Chyu-Jiuh Torng 2012-05-01
8105948 Use of CMP to contact a MTJ structure without forming a via Adam Zhong, Tom Zhong, Chyu-Jiuh Torng 2012-01-31
7919407 Method of high density field induced MRAM process Tom Zhong, Daniel Liu, Adam Zhong, Chyu-Jiuh Torng 2011-04-05
7884433 High density spin-transfer torque MRAM process Tom Zhong, Chyu-Jiuh Torng, Rongfu Xiao, Adam Zhong, Daniel Liu 2011-02-08
7838436 Bottom electrode for MRAM device and method to fabricate it Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong +4 more 2010-11-23
7508700 Method of magnetic tunneling junction pattern layout for magnetic random access memory Tom Zhong, Terry Kin Ting Ko, Chyu-Jiuh Torng, Adam Zhong 2009-03-24