Issued Patents All Time
Showing 26–50 of 113 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8728825 | GMR sensor stripe for a biosensor with enhanced sensitivity | Po-Kang Wang, Xizeng Shi | 2014-05-20 |
| 8722543 | Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices | Rodolfo P. Belen, Rongfu Xiao, Tom Zhong, Witold Kula | 2014-05-13 |
| 8636911 | Process for MEMS scanning mirror with mass remove from mirror backside | Jun Chen, Guomin Mao, Tom Zhong, Wei Cao, Yee-Chung Fu | 2014-01-28 |
| 8492169 | Magnetic tunnel junction for MRAM applications | Wei Cao, Witold Kula | 2013-07-23 |
| 8484830 | Method of manufacturing a CPP structure with enhanced GMR ratio | Kunliang Zhang, Min Li, Yu-Hsia Chen | 2013-07-16 |
| 8450119 | Magnetic tunnel junction patterning using Ta/TaN as hard mask | Wei Cao, Terry Kin Ting Ko | 2013-05-28 |
| 8436437 | High performance MTJ elements for STT-RAM and method for making the same | Cheng T. Horng, Ru-Ying Tong, Witold Kula | 2013-05-07 |
| 8372661 | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same | Cheng T. Horng, Ru-Ying Tong, Witold Kula | 2013-02-12 |
| 8324698 | High density spin-transfer torque MRAM process | Tom Zhong, Rongfu Xiao, Adam Zhong, Wai-Ming J. Kan, Daniel Liu | 2012-12-04 |
| 8289661 | CPP structure with enhanced GMR ratio | Kunliang Zhang, Min Li, Yu-Hsia Chen | 2012-10-16 |
| 8183061 | High density spin-transfer torque MRAM process | Tom Zhong, Rongfu Xiao, Adam Zhong, Wai-Ming J. Kan, Daniel Liu | 2012-05-22 |
| 8176622 | Process for manufacturing a magnetic tunnel junction (MTJ) device | Cheng T. Horng, Ru-Ying Tong, Witold Kula | 2012-05-15 |
| 8169816 | Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory | Tai Min, Wai-Ming J. Kan, David Heim | 2012-05-01 |
| 8138561 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM | Cheng T. Horng, Ru-Ying Tong, Po-Kang Wang, Robert Beach, Witold Kula | 2012-03-20 |
| 8133745 | Method of magnetic tunneling layer processes for spin-transfer torque MRAM | Tom Zhong, Rongfu Xiao, Adam Zhong | 2012-03-13 |
| 8133439 | GMR biosensor with enhanced sensitivity | Po-Kang Wang, Xizeng Shi | 2012-03-13 |
| 8105948 | Use of CMP to contact a MTJ structure without forming a via | Adam Zhong, Wai-Ming J. Kan, Tom Zhong | 2012-01-31 |
| 8105703 | Process for composite free layer in CPP GMR or TMR device | Hui-Chuan Wang, Min Li, Tong Zhao, Kunliang Zhang | 2012-01-31 |
| 8107201 | Hard bias design for extra high density recording | Kunliang Zhang, Yun-Fei Li, Chen-Jung Chien | 2012-01-31 |
| 8080432 | High performance MTJ element for STT-RAM and method for making the same | Cheng T. Horng, Ru-Ying Tong, Witold Kula | 2011-12-20 |
| 8058698 | High performance MTJ element for STT-RAM and method for making the same | Cheng T. Horng, Ru-Ying Tong, Witold Kula | 2011-11-15 |
| 8035931 | Tunneling magneto-resistive spin valve sensor with novel composite free layer | Tong Zhao, Hui-Chuan Wang | 2011-10-11 |
| 8012316 | FCC-like trilayer AP2 structure for CPP GMR EM improvement | Kunliang Zhang, Dan Abels, Min Li, Chen-Jung Chien, Yu-Hsia Chen | 2011-09-06 |
| 7983011 | AP1 layer for TMR device | Tong Zhao, Hui-Chuan Wang | 2011-07-19 |
| 7950136 | Process of making an improved AP1 layer for a TMR device | Tong Zhao, Hui-Chuan Wang | 2011-05-31 |