HZ

Hui Zang

Globalfoundries: 278 patents #2 of 4,424Top 1%
SC Sprint Communications: 36 patents #51 of 2,085Top 3%
OT Omnivision Technologies: 33 patents #18 of 604Top 3%
IBM: 29 patents #3,528 of 70,183Top 6%
GU Globalfoundries U.S.: 27 patents #21 of 665Top 4%
Futurewei Technologies: 7 patents #254 of 1,563Top 20%
SS Sprint Spectrum: 4 patents #226 of 810Top 30%
Huawei: 2 patents #5,439 of 15,535Top 40%
📍 Cupertino, CA: #4 of 6,989 inventorsTop 1%
🗺 California: #131 of 386,348 inventorsTop 1%
Overall (All Time): #638 of 4,157,543Top 1%
399
Patents All Time

Issued Patents All Time

Showing 301–325 of 399 patents

Patent #TitleCo-InventorsDate
9748392 Formation of work-function layers for gate electrode using a gas cluster ion beam Yanzhen Wang, Jidong Huang 2017-08-29
9741615 Contacts for a fin-type field-effect transistor Min-hwa Chi 2017-08-22
9741715 Structure to prevent lateral epitaxial growth in semiconductor devices Balasubramanian Pranatharthiharan 2017-08-22
9735152 Non-planar structure with extended exposed raised structures and same-level gate and spacers Bingwu Liu 2017-08-15
9734897 SRAM bitcell structures facilitating biasing of pass gate transistors Manfred Eller, Min-hwa Chi 2017-08-15
9728615 Fin shape contacts and methods for forming fin shape contacts 2017-08-08
9716138 Devices and methods for dynamically tunable biasing to backplates and wells Min-hwa Chi 2017-07-25
9691787 Co-fabricated bulk devices and semiconductor-on-insulator devices Bingwu Liu 2017-06-27
9646885 Method to prevent lateral epitaxial growth in semiconductor devices by performing plasma nitridation process on Fin ends Balasubramanian Pranatharthiharan 2017-05-09
9646969 Spacer chamfering gate stack scheme Hyun-Jin Cho, Tenko Yamashita 2017-05-09
9620425 Method of adjusting spacer thickness to provide variable threshold voltages in FinFETs Min-hwa Chi, Jinping Liu 2017-04-11
9613958 Spacer chamfering gate stack scheme Hyun-Jin Cho, Tenko Yamashita 2017-04-04
9608087 Integrated circuits with spacer chamfering and methods of spacer chamfering 2017-03-28
9601512 SOI-based semiconductor device with dynamic threshold voltage Manfred Eller 2017-03-21
9601490 FinFET work function metal formation Hoon Kim 2017-03-21
9601495 Three-dimensional semiconductor device with co-fabricated adjacent capacitor Min-hwa Chi 2017-03-21
9590074 Method to prevent lateral epitaxial growth in semiconductor devices Balasubramanian Pranatharthiharan 2017-03-07
9583479 Semiconductor charge pump with imbedded capacitor Min-hwa Chi 2017-02-28
9576856 Fabrication of nanowire field effect transistor structures Bingwu Liu 2017-02-21
9570318 High-k and p-type work function metal first fabrication process having improved annealing process flows Jin Cho, Miaomiao Wang 2017-02-14
9570615 Gate stack and contact structure 2017-02-14
9564484 Metal-insulator-metal back end of line capacitor structures Bingwu Liu 2017-02-07
9564440 Spacer chamfering gate stack scheme Hyun-Jin Cho, Tenko Yamashita 2017-02-07
9543298 Single diffusion break structure and cuts later method of making Jerome Ciavatti, Min-hwa Chi 2017-01-10
9536991 Single diffusion break structure Jerome Ciavatti, Min-hwa Chi 2017-01-03