Issued Patents All Time
Showing 101–122 of 122 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7001821 | Method of forming and using a hardmask for forming ferroelectric capacitors in a semiconductor device | Kelly Taylor, Theodore S. Moise | 2006-02-21 |
| 6995088 | Surface treatment of copper to improve interconnect formation | Lindsey Hall, Trace Hurd | 2006-02-07 |
| 6984857 | Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same | K. Udayakumar, Martin G. Albrecht, Theodore S. Moise, Scott R. Summerfelt, Jeff L. Large | 2006-01-10 |
| 6876021 | Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier | J. Scott Martin, Scott R. Summerfelt, Theodore S. Moise, Kelly Taylor, Luigi Colombo +3 more | 2005-04-05 |
| 6872669 | PZT (111) texture through Ir texture improvement | Scott R. Summerfelt | 2005-03-29 |
| 6828161 | Method of forming an FeRAM having a multi-layer hard mask and patterning thereof | Scott R. Summerfelt, Luigi Colombo, Theodore S. Moise, J. Scott Martin | 2004-12-07 |
| 6773930 | Method of forming an FeRAM capacitor having a bottom electrode diffusion barrier | Scott R. Summerfelt, Tomojuki Sakoda, Chiu Chi, Theodore S. Moise | 2004-08-10 |
| 6730354 | Forming ferroelectric Pb(Zr,Ti)O3 films | Stephen Roy Gilbert, Kaushal K. Singh, Stevan G. Hunter | 2004-05-04 |
| 6686236 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | Stephen Roy Gilbert, Scott R. Summerfelt | 2004-02-03 |
| 6635498 | Method of patterning a FeRAM capacitor with a sidewall during bottom electrode etch | Scott R. Summerfelt, Guoqiang Xing, Luigi Colombo, Theodore S. Moise | 2003-10-21 |
| 6635497 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | Stephen Roy Gilbert, Scott R. Summerfelt | 2003-10-21 |
| 6617178 | Test system for ferroelectric materials and noble metal electrodes in semiconductor capacitors | Kaushal K. Singh | 2003-09-09 |
| 6610549 | Amorphous barrier layer in a ferroelectric memory cell | Ramamoorthy Ramesh | 2003-08-26 |
| 6596547 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | Stephen Roy Gilbert, Scott R. Summerfelt | 2003-07-22 |
| 6576482 | One step deposition process for the top electrode and hardmask in a ferroelectric memory cell | Scott R. Summerfelt, Stevan G. Hunter | 2003-06-10 |
| 6528386 | Protection of tungsten alignment mark for FeRAM processing | Scott R. Summerfelt, Luigi Colombo, Stephen Roy Gilbert, Theodore S. Moise | 2003-03-04 |
| 6528328 | Methods of preventing reduction of irox during PZT formation by metalorganic chemical vapor deposition or other processing | Stephen Roy Gilbert, Scott R. Summerfelt | 2003-03-04 |
| 6500678 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | Stephen Roy Gilbert, Scott R. Summerfelt | 2002-12-31 |
| 6274388 | Annealing of a crystalline perovskite ferroelectric cell | Anil M. Dhote, Ramamoorthy Ramesh | 2001-08-14 |
| 6265230 | Methods to cure the effects of hydrogen annealing on ferroelectric capacitors | Scott Robert Perusse, Ramamoorthy Ramesh | 2001-07-24 |
| 6194754 | Amorphous barrier layer in a ferroelectric memory cell | Ramamoorthy Ramesh | 2001-02-27 |
| 6115281 | Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors | Scott Robert Perusse, Ramamoorthy Ramesh | 2000-09-05 |