Issued Patents All Time
Showing 26–50 of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9601511 | Low leakage dual STI integrated circuit including FDSOI transistors | Maud Vinet, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Yannick Le Tiec +1 more | 2017-03-21 |
| 9601352 | Method of localized annealing of semi-conducting elements using a reflective area | Issam Ouerghi, Thomas Ernst | 2017-03-21 |
| 9570465 | Dual STI integrated circuit including FDSOI transistors and method for manufacturing the same | Maud Vinet, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Yannick Le Tiec +1 more | 2017-02-14 |
| 9570340 | Method of etching a crystalline semiconductor material by ion implantation and then chemical etching based on hydrogen chloride | Maud Vinet, Romain Wacquez | 2017-02-14 |
| 9502558 | Local strain generation in an SOI substrate | Shay Reboh, Cyrille Le Royer, Sylvain Maitrejean, Yves Morand | 2016-11-22 |
| 9466664 | Uniaxially-strained FD-SOI finFET | Pierre Morin, Maud Vinet, Ajey Poovannummoottil Jacob | 2016-10-11 |
| 9437474 | Method for fabricating microelectronic devices with isolation trenches partially formed under active regions | Yannick Le Tiec, Nicolas Loubet, Maud Vinet, Romain Wacquez | 2016-09-06 |
| 9425051 | Method for producing a silicon-germanium film with variable germanium content | Maud Vinet, Yves Morand | 2016-08-23 |
| 9373507 | Defective P-N junction for backgated fully depleted silicon on insulator mosfet | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Yannick Le Tiec, Qing Liu +1 more | 2016-06-21 |
| 9337350 | Transistor with reduced parasitic capacitance and access resistance of the source and drain, and method of fabrication of the same | Nicolas Posseme, Yannick Le Tiec, Maud Vinet | 2016-05-10 |
| 9293474 | Dual channel hybrid semiconductor-on-insulator semiconductor devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Qing Liu, Yannick Le Tiec +1 more | 2016-03-22 |
| 9252208 | Uniaxially-strained FD-SOI finFET | Pierre Morin, Maud Vinet, Ajey Poovannummoottil Jacob | 2016-02-02 |
| 9236478 | Method for manufacturing a fin MOS transistor | Yves Morand, Romain Wacquez, Yannick Le Tiec, Maud Vinet | 2016-01-12 |
| 9231062 | Method for treating the surface of a silicon substrate | Yannick Le Tiec, Maud Vinet, Romain Wacquez | 2016-01-05 |
| 9123814 | Field effect device provided with a thinned counter-electrode and method for fabricating | Maud Vinet | 2015-09-01 |
| 9105691 | Contact isolation scheme for thin buried oxide substrate devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Yannick Le Tiec, Qing Liu +1 more | 2015-08-11 |
| 9076732 | Method to prepare semi-conductor device comprising a selective etching of a silicium—germanium layer | Yannick Le Tiec, Nicolas Posseme, Maud Vinet | 2015-07-07 |
| 9070709 | Method for producing a field effect transistor with implantation through the spacers | Nicolas Posseme, Yannick Le Tiec, Nicolas Loubet, Maud Vinet | 2015-06-30 |
| 9059041 | Dual channel hybrid semiconductor-on-insulator semiconductor devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Qing Liu, Yannick Le Tiec +1 more | 2015-06-16 |
| 8994142 | Field effect transistor with offset counter-electrode contact | Maud Vinet, Yannick Le Tiec, Nicolas Posseme | 2015-03-31 |
| 8987854 | Microelectronic device with isolation trenches extending under an active area | Maud Vinet, Yannick Le Tiec, Romain Wacquez | 2015-03-24 |
| 8969148 | Method for producing a transistor structure with superimposed nanowires and with a surrounding gate | Maud Vinet, Sylvain Barraud | 2015-03-03 |
| 8969966 | Defective P-N junction for backgated fully depleted silicon on insulator MOSFET | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Yannick Le Tiec, Qing Liu +1 more | 2015-03-03 |
| 8890219 | UTBB CMOS imager having a diode junction in a photosensitive area thereof | Maud Vinet | 2014-11-18 |
| 8877618 | Method for producing a field effect transistor with a SiGe channel by ion implantation | Maud Vinet, Yannick Le Tiec, Romain Wacquez, Olivier Faynot | 2014-11-04 |