Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10777451 | Semiconductor device including enhanced contact structures having a superlattice | Robert John Stephenson, Richard Burton, Dmitri A. Choutov, Daniel J. Connelly, Robert J. Mears +1 more | 2020-09-15 |
| 10727049 | Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice | Keith Doran Weeks, Marek Hytha, Robert J. Mears, Robert John Stephenson | 2020-07-28 |
| 10566191 | Semiconductor device including superlattice structures with reduced defect densities | Keith Doran Weeks, Marek Hytha, Robert J. Mears, Robert John Stephenson | 2020-02-18 |
| 10468245 | Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice | Keith Doran Weeks, Marek Hytha, Robert J. Mears, Robert John Stephenson | 2019-11-05 |
| 10109479 | Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice | Robert J. Mears, Robert John Stephenson, Keith Doran Weeks, Marek Hytha | 2018-10-23 |
| 9721790 | Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity control | Robert J. Mears, Robert John Stephenson | 2017-08-01 |
| 9558939 | Methods for making a semiconductor device including atomic layer structures using N2O as an oxygen source | Robert John Stephenson | 2017-01-31 |
| 9127345 | Methods for depositing an epitaxial silicon germanium layer having a germanium to silicon ratio greater than 1:1 using silylgermane and a diluent | Shawn George Thomas | 2015-09-08 |
| 9093269 | In-situ pre-clean prior to epitaxy | Shawn George Thomas, Pierre Tomasini | 2015-07-28 |
| 7825401 | Strained layers within semiconductor buffer structures | Christophe Figuet, Mark Kennard | 2010-11-02 |
| 7816236 | Selective deposition of silicon-containing films | Matthias Bauer, Chantal Arena, Ronald Thomas Bertram, JR., Pierre Tomasini, Paul Brabant +3 more | 2010-10-19 |
| 7785995 | Semiconductor buffer structures | Chantal Arena, Pierre Tomasini, Carlos Mazure | 2010-08-31 |
| 7772097 | Methods of selectively depositing silicon-containing films | Pierre Tomasini | 2010-08-10 |
| 7666799 | Epitaxial growth of relaxed silicon germanium layers | Chantal Arena, Pierre Tomasini, Matthias Bauer | 2010-02-23 |
| 7648690 | Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition | Matthias Bauer, Keith Doran Weeks, Pierre Tomasini | 2010-01-19 |
| 7608526 | Strained layers within semiconductor buffer structures | Christophe Figuet, Mark Kennard | 2009-10-27 |
| 7514372 | Epitaxial growth of relaxed silicon germanium layers | Chantal Arena, Pierre Tomasini, Matthias Bauer | 2009-04-07 |
| 7438760 | Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition | Matthias Bauer, Keith Doran Weeks, Pierre Tomasini | 2008-10-21 |
| 7427556 | Method to planarize and reduce defect density of silicon germanium | Pierre Tomasini, Chantal Arena | 2008-09-23 |
| 7022593 | SiGe rectification process | Chantal Arena, Pierre Tomasini | 2006-04-04 |
| 6521961 | Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor | Julio C. Costa, Ernest Schirmann, Marino J. Martinez | 2003-02-18 |
| 6429103 | MOCVD-grown emode HIGFET buffer | Eric S. Johnson | 2002-08-06 |