Issued Patents All Time
Showing 25 most recent of 89 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12417912 | Radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice | Hideki Takeuchi | 2025-09-16 |
| 12267996 | DRAM sense amplifier architecture with reduced power consumption and related methods | Richard S. Roy | 2025-04-01 |
| 12191160 | Method for making a semiconductor superlattices with different non-semiconductor thermal stabilities | Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha | 2025-01-07 |
| 12142641 | Method for making gate-all-around (GAA) device including a superlattice | Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert John Stephenson, Hideki Takeuchi | 2024-11-12 |
| 12119380 | Method for making semiconductor device including superlattice with oxygen and carbon monolayers | Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert John Stephenson, Hideki Takeuchi | 2024-10-15 |
| 12020926 | Radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice | Hideki Takeuchi | 2024-06-25 |
| 12014923 | Methods for making radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice | Hideki Takeuchi | 2024-06-18 |
| 11978771 | Gate-all-around (GAA) device including a superlattice | Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert John Stephenson, Hideki Takeuchi | 2024-05-07 |
| 11848356 | Method for making semiconductor device including superlattice with oxygen and carbon monolayers | Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert John Stephenson, Hideki Takeuchi | 2023-12-19 |
| 11837634 | Semiconductor device including superlattice with oxygen and carbon monolayers | Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert John Stephenson, Hideki Takeuchi | 2023-12-05 |
| 11742202 | Methods for making radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice | Hideki Takeuchi | 2023-08-29 |
| 11664427 | Vertical semiconductor device with enhanced contact structure and associated methods | Robert John Stephenson, Richard Burton, Dmitri A. Choutov, Nyles Wynn Cody, Daniel J. Connelly +1 more | 2023-05-30 |
| 11430869 | Method for making superlattice structures with reduced defect densities | Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert John Stephenson | 2022-08-30 |
| 11387325 | Vertical semiconductor device with enhanced contact structure and associated methods | Robert John Stephenson, Richard Burton, Dmitri A. Choutov, Nyles Wynn Cody, Daniel J. Connelly +1 more | 2022-07-12 |
| 11183565 | Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods | Richard Burton, Marek Hytha | 2021-11-23 |
| 10937888 | Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices | Richard Burton, Marek Hytha | 2021-03-02 |
| 10937868 | Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices | Richard Burton, Marek Hytha | 2021-03-02 |
| 10879357 | Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice | Richard Burton, Marek Hytha | 2020-12-29 |
| 10879356 | Method for making a semiconductor device including enhanced contact structures having a superlattice | Robert John Stephenson, Richard Burton, Dmitri A. Choutov, Nyles Wynn Cody, Daniel J. Connelly +1 more | 2020-12-29 |
| 10868120 | Method for making a varactor with hyper-abrupt junction region including a superlattice | Richard Burton, Marek Hytha | 2020-12-15 |
| 10854717 | Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance | Hideki Takeuchi, Daniel J. Connelly, Marek Hytha, Richard Burton | 2020-12-01 |
| 10847618 | Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance | Hideki Takeuchi, Daniel J. Connelly, Marek Hytha, Richard Burton | 2020-11-24 |
| 10840337 | Method for making a FINFET having reduced contact resistance | Hideki Takeuchi, Daniel J. Connelly, Marek Hytha, Richard Burton | 2020-11-17 |
| 10840388 | Varactor with hyper-abrupt junction region including a superlattice | Richard Burton, Marek Hytha | 2020-11-17 |
| 10840336 | Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods | Daniel J. Connelly, Marek Hytha, Hideki Takeuchi, Richard Burton | 2020-11-17 |