RM

Robert J. Mears

AI Atomera Incorporated: 54 patents #1 of 20Top 5%
RM Rj Mears: 18 patents #1 of 12Top 9%
MT Mears Technologies: 17 patents #1 of 14Top 8%
📍 Wellesley, MA: #5 of 837 inventorsTop 1%
🗺 Massachusetts: #328 of 88,656 inventorsTop 1%
Overall (All Time): #18,107 of 4,157,543Top 1%
89
Patents All Time

Issued Patents All Time

Showing 51–75 of 89 patents

Patent #TitleCo-InventorsDate
9722046 Semiconductor device including a superlattice and replacement metal gate structure and related methods Tsu-Jae King Liu, Hideki Takeuchi 2017-08-01
9721790 Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity control Nyles Wynn Cody, Robert John Stephenson 2017-08-01
9716147 Semiconductor devices with enhanced deterministic doping and related methods 2017-07-25
9406753 Semiconductor devices including superlattice depletion layer stack and related methods Hideki Takeuchi, Erwin Trautmann 2016-08-02
9275996 Vertical semiconductor devices including superlattice punch through stop layer and related methods Hideki Takeuchi, Erwin Trautmann 2016-03-01
8389974 Multiple-wavelength opto-electronic device including a superlattice Robert John Stephenson, Marek Hytha, Ilija Dukovski, Jean Augustin Chan Sow Fook Yiptong, Samed Halilov +1 more 2013-03-05
7880161 Multiple-wavelength opto-electronic device including a superlattice Robert John Stephenson, Marek Hytha, Ilija Dukovski, Jean Augustin Chan Sow Fook Yiptong, Samed Halilov +1 more 2011-02-01
7863066 Method for making a multiple-wavelength opto-electronic device including a superlattice Robert John Stephenson, Marek Hytha, Ilija Dukovski, Jean Augustin Chan Sow Fook Yiptong, Samed Halilov +1 more 2011-01-04
7812339 Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures Kalipatnam Vivek Rao 2010-10-12
7718996 Semiconductor device comprising a lattice matching layer Ilija Dukovski, Robert John Stephenson, Jean Augustin Chan Sow Fook Yiptong, Samed Halilov, Xiangyang Huang +1 more 2010-05-18
7700447 Method for making a semiconductor device comprising a lattice matching layer Ilija Dukovski, Robert John Stephenson, Jean Augustin Chan Sow Fook Yiptong, Samed Halilov, Xiangyang Huang +1 more 2010-04-20
7625767 Methods of making spintronic devices with constrained spintronic dopant Xiangyang Huang, Samed Halilov, Jean Augustin Chan Sow Fook Yiptong, Ilija Dukovski, Marek Hytha 2009-12-01
7612366 Semiconductor device including a strained superlattice layer above a stress layer Scott A. Kreps 2009-11-03
7598515 Semiconductor device including a strained superlattice and overlying stress layer and related methods Scott A. Kreps 2009-10-06
7531828 Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions Scott A. Kreps 2009-05-12
7517702 Method for making an electronic device including a poled superlattice having a net electrical dipole moment Samed Halilov, Xiangyang Huang, Ilija Dukovski, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha +1 more 2009-04-14
7446334 Electronic device comprising active optical devices with an energy band engineered superlattice Robert John Stephenson 2008-11-04
7446002 Method for making a semiconductor device comprising a superlattice dielectric interface layer Marek Hytha, Scott A. Kreps, Robert John Stephenson, Jean Augustin Chan Sow Fook Yiptong, Ilija Dukovski +3 more 2008-11-04
7435988 Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Scott A. Kreps, Ilija Dukovski 2008-10-14
7432524 Integrated circuit comprising an active optical device having an energy band engineered superlattice Robert John Stephenson 2008-10-07
7303948 Semiconductor device including MOSFET having band-engineered superlattice Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Scott A. Kreps, Ilija Dukovski 2007-12-04
7279699 Integrated circuit comprising a waveguide having an energy band engineered superlattice Robert John Stephenson 2007-10-09
7265002 Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Scott A. Kreps, Ilija Dukovski 2007-09-04
7229902 Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction Robert John Stephenson 2007-06-12
7227174 Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction Robert John Stephenson 2007-06-05