| 12417912 |
Radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice |
Robert J. Mears |
2025-09-16 |
|
| 12322594 |
Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
Marek Hytha, Keith Doran Weeks, Nyles Wynn Cody |
2025-06-03 |
|
| 12308229 |
Method for making memory device including a superlattice gettering layer |
— |
2025-05-20 |
|
| 12199180 |
Semiconductor device including a superlattice and an asymmetric channel and related methods |
Richard Burton, Yung-Hsuan Yang |
2025-01-14 |
|
| 12142641 |
Method for making gate-all-around (GAA) device including a superlattice |
Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert J. Mears, Robert John Stephenson |
2024-11-12 |
$1,092,000 |
| 12119380 |
Method for making semiconductor device including superlattice with oxygen and carbon monolayers |
Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert J. Mears, Robert John Stephenson |
2024-10-15 |
$1,714,000 |
| 12046470 |
Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
Marek Hytha, Keith Doran Weeks, Nyles Wynn Cody |
2024-07-23 |
$1,652,000 |
| 12020926 |
Radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice |
Robert J. Mears |
2024-06-25 |
$1,764,000 |
| 12014923 |
Methods for making radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice |
Robert J. Mears |
2024-06-18 |
$1,769,000 |
| 11978771 |
Gate-all-around (GAA) device including a superlattice |
Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert J. Mears, Robert John Stephenson |
2024-05-07 |
$1,915,000 |
| 11923418 |
Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
Marek Hytha, Keith Doran Weeks, Nyles Wynn Cody |
2024-03-05 |
$1,671,000 |
| 11869968 |
Semiconductor device including a superlattice and an asymmetric channel and related methods |
Richard Burton, Yung-Hsuan Yang |
2024-01-09 |
$3,240,000 |
| 11848356 |
Method for making semiconductor device including superlattice with oxygen and carbon monolayers |
Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert J. Mears, Robert John Stephenson |
2023-12-19 |
$3,614,000 |
| 11837634 |
Semiconductor device including superlattice with oxygen and carbon monolayers |
Keith Doran Weeks, Nyles Wynn Cody, Marek Hytha, Robert J. Mears, Robert John Stephenson |
2023-12-05 |
$3,279,000 |
| 11810784 |
Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
Marek Hytha, Keith Doran Weeks, Nyles Wynn Cody |
2023-11-07 |
$2,410,000 |
| 11742202 |
Methods for making radio frequency (RF) semiconductor devices including a ground plane layer having a superlattice |
Robert J. Mears |
2023-08-29 |
$2,816,000 |
| 11569368 |
Method for making semiconductor device including a superlattice and providing reduced gate leakage |
Yung-Hsuan Yang |
2023-01-31 |
$3,159,000 |
| 11469302 |
Semiconductor device including a superlattice and providing reduced gate leakage |
Yung-Hsuan Yang |
2022-10-11 |
$3,446,000 |
| 11459248 |
Method of removing soluble manganese |
Satoru Mima, Sadamitsu SHIODE, Hiroyuki Oyachi, Kiyotaka Sugiura |
2022-10-04 |
|
| 11329154 |
Semiconductor device including a superlattice and an asymmetric channel and related methods |
Richard Burton, Yung-Hsuan Yang |
2022-05-10 |
$5,125,000 |
| 11094818 |
Method for making a semiconductor device including a superlattice and an asymmetric channel and related methods |
Richard Burton, Yung-Hsuan Yang |
2021-08-17 |
$11,025,000 |
| 11075078 |
Method for making a semiconductor device including a superlattice within a recessed etch |
Nyles Wynn Cody, Keith Doran Weeks, Robert John Stephenson, Richard Burton, Yi-Ann Chen +2 more |
2021-07-27 |
$9,643,000 |
| 10854717 |
Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance |
Daniel J. Connelly, Marek Hytha, Richard Burton, Robert J. Mears |
2020-12-01 |
$4,043,000 |
| 10847618 |
Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance |
Daniel J. Connelly, Marek Hytha, Richard Burton, Robert J. Mears |
2020-11-24 |
$3,650,000 |
| 10840335 |
Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance |
Daniel J. Connelly, Marek Hytha, Richard Burton, Robert J. Mears |
2020-11-17 |
$959,000 |
