Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for making a semiconductor device including a superlattice and an asymmetric channel and related methods

Method for making a semiconductor device including a superlattice and an asymmetric channel and related methods

US Patent 11094818 · Granted Aug 17, 2021

Estimated economic value: $11,025,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Bipolar junction transistors including emitter-base and base-collector superlatt2025
Radio frequency (RF) semiconductor devices including a ground plane layer having2025
Method for making DMOS devices including a superlattice and field plate for drif2025
Method for making semiconductor device including a superlattice and enriched sil2025
Method for making memory device including a superlattice gettering layer2025
Semiconductor device including a superlattice and an asymmetric channel and rela2025
Semiconductor device including a superlattice and an asymmetric channel and rela2025
Semiconductor device including a superlattice and an asymmetric channel and rela2025
Method for making gate-all-around (GAA) device including a superlattice2024
Method for making semiconductor device including superlattice with oxygen and ca2024
Method for making semiconductor device including a superlattice and enriched sil2024
Radio frequency (RF) semiconductor devices including a ground plane layer having2024