Issued Patents All Time
Showing 1–25 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12382689 | Method for making DMOS devices including a superlattice and field plate for drift region diffusion | Shuyi Li | 2025-08-05 |
| 12199180 | Semiconductor device including a superlattice and an asymmetric channel and related methods | Hideki Takeuchi, Yung-Hsuan Yang | 2025-01-14 |
| 11935940 | Methods for making bipolar junction transistors including emitter-base and base-collector superlattices | — | 2024-03-19 |
| 11923431 | Bipolar junction transistors including emitter-base and base-collector superlattices | — | 2024-03-05 |
| 11869968 | Semiconductor device including a superlattice and an asymmetric channel and related methods | Hideki Takeuchi, Yung-Hsuan Yang | 2024-01-09 |
| 11664427 | Vertical semiconductor device with enhanced contact structure and associated methods | Robert John Stephenson, Dmitri A. Choutov, Nyles Wynn Cody, Daniel J. Connelly, Robert J. Mears +1 more | 2023-05-30 |
| 11437486 | Methods for making bipolar junction transistors including emitter-base and base-collector superlattices | — | 2022-09-06 |
| 11437487 | Bipolar junction transistors including emitter-base and base-collector superlattices | — | 2022-09-06 |
| 11387325 | Vertical semiconductor device with enhanced contact structure and associated methods | Robert John Stephenson, Dmitri A. Choutov, Nyles Wynn Cody, Daniel J. Connelly, Robert J. Mears +1 more | 2022-07-12 |
| 11329154 | Semiconductor device including a superlattice and an asymmetric channel and related methods | Hideki Takeuchi, Yung-Hsuan Yang | 2022-05-10 |
| 11183565 | Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods | Marek Hytha, Robert J. Mears | 2021-11-23 |
| 11094818 | Method for making a semiconductor device including a superlattice and an asymmetric channel and related methods | Hideki Takeuchi, Yung-Hsuan Yang | 2021-08-17 |
| 11075078 | Method for making a semiconductor device including a superlattice within a recessed etch | Nyles Wynn Cody, Keith Doran Weeks, Robert John Stephenson, Yi-Ann Chen, Dmitri A. Choutov +2 more | 2021-07-27 |
| 10937888 | Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices | Marek Hytha, Robert J. Mears | 2021-03-02 |
| 10937868 | Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices | Marek Hytha, Robert J. Mears | 2021-03-02 |
| 10879357 | Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice | Marek Hytha, Robert J. Mears | 2020-12-29 |
| 10879356 | Method for making a semiconductor device including enhanced contact structures having a superlattice | Robert John Stephenson, Dmitri A. Choutov, Nyles Wynn Cody, Daniel J. Connelly, Robert J. Mears +1 more | 2020-12-29 |
| 10868120 | Method for making a varactor with hyper-abrupt junction region including a superlattice | Marek Hytha, Robert J. Mears | 2020-12-15 |
| 10854717 | Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance | Hideki Takeuchi, Daniel J. Connelly, Marek Hytha, Robert J. Mears | 2020-12-01 |
| 10847618 | Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance | Hideki Takeuchi, Daniel J. Connelly, Marek Hytha, Robert J. Mears | 2020-11-24 |
| 10840388 | Varactor with hyper-abrupt junction region including a superlattice | Marek Hytha, Robert J. Mears | 2020-11-17 |
| 10840335 | Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance | Hideki Takeuchi, Daniel J. Connelly, Marek Hytha, Robert J. Mears | 2020-11-17 |
| 10840336 | Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods | Daniel J. Connelly, Marek Hytha, Hideki Takeuchi, Robert J. Mears | 2020-11-17 |
| 10840337 | Method for making a FINFET having reduced contact resistance | Hideki Takeuchi, Daniel J. Connelly, Marek Hytha, Robert J. Mears | 2020-11-17 |
| 10825901 | Semiconductor devices including hyper-abrupt junction region including a superlattice | Marek Hytha, Robert J. Mears | 2020-11-03 |