| 12477798 |
Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
Keith Doran Weeks, Nyles Wynn Cody, Hideki Takeuchi |
2025-11-18 |
|
| 12322594 |
Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
Keith Doran Weeks, Nyles Wynn Cody, Hideki Takeuchi |
2025-06-03 |
|
| 12315723 |
Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms |
Keith Doran Weeks, Nyles Wynn Cody |
2025-05-27 |
|
| 12199148 |
Semiconductor device including superlattice with O18 enriched monolayers |
Nyles Wynn Cody, Keith Doran Weeks |
2025-01-14 |
|
| 12191160 |
Method for making a semiconductor superlattices with different non-semiconductor thermal stabilities |
Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears |
2025-01-07 |
|
| 12142641 |
Method for making gate-all-around (GAA) device including a superlattice |
Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi |
2024-11-12 |
$1,092,000 |
| 12119380 |
Method for making semiconductor device including superlattice with oxygen and carbon monolayers |
Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi |
2024-10-15 |
$1,714,000 |
| 12046470 |
Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
Keith Doran Weeks, Nyles Wynn Cody, Hideki Takeuchi |
2024-07-23 |
$1,652,000 |
| 11978771 |
Gate-all-around (GAA) device including a superlattice |
Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi |
2024-05-07 |
$1,915,000 |
| 11923418 |
Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
Keith Doran Weeks, Nyles Wynn Cody, Hideki Takeuchi |
2024-03-05 |
$1,671,000 |
| 11848356 |
Method for making semiconductor device including superlattice with oxygen and carbon monolayers |
Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi |
2023-12-19 |
$3,614,000 |
| 11837634 |
Semiconductor device including superlattice with oxygen and carbon monolayers |
Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson, Hideki Takeuchi |
2023-12-05 |
$3,279,000 |
| 11810784 |
Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer |
Keith Doran Weeks, Nyles Wynn Cody, Hideki Takeuchi |
2023-11-07 |
$2,410,000 |
| 11728385 |
Semiconductor device including superlattice with O18 enriched monolayers |
Nyles Wynn Cody, Keith Doran Weeks |
2023-08-15 |
$2,963,000 |
| 11721546 |
Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms |
Keith Doran Weeks, Nyles Wynn Cody |
2023-08-08 |
$3,330,000 |
| 11682712 |
Method for making semiconductor device including superlattice with O18 enriched monolayers |
Nyles Wynn Cody, Keith Doran Weeks |
2023-06-20 |
$3,522,000 |
| 11631584 |
Method for making semiconductor device with selective etching of superlattice to define etch stop layer |
Keith Doran Weeks, Nyles Wynn Cody |
2023-04-18 |
$2,144,000 |
| 11430869 |
Method for making superlattice structures with reduced defect densities |
Keith Doran Weeks, Nyles Wynn Cody, Robert J. Mears, Robert John Stephenson |
2022-08-30 |
$5,183,000 |
| 11183565 |
Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods |
Richard Burton, Robert J. Mears |
2021-11-23 |
$13,843,000 |
| 10937888 |
Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices |
Richard Burton, Robert J. Mears |
2021-03-02 |
$6,545,000 |
| 10937868 |
Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices |
Richard Burton, Robert J. Mears |
2021-03-02 |
$6,545,000 |
| 10879357 |
Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice |
Richard Burton, Robert J. Mears |
2020-12-29 |
$3,389,000 |
| 10868120 |
Method for making a varactor with hyper-abrupt junction region including a superlattice |
Richard Burton, Robert J. Mears |
2020-12-15 |
$5,308,000 |
| 10854717 |
Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance |
Hideki Takeuchi, Daniel J. Connelly, Richard Burton, Robert J. Mears |
2020-12-01 |
$4,043,000 |
| 10847618 |
Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance |
Hideki Takeuchi, Daniel J. Connelly, Richard Burton, Robert J. Mears |
2020-11-24 |
$3,650,000 |