Issued Patents All Time
Showing 51–68 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7625767 | Methods of making spintronic devices with constrained spintronic dopant | Xiangyang Huang, Samed Halilov, Jean Augustin Chan Sow Fook Yiptong, Ilija Dukovski, Robert J. Mears | 2009-12-01 |
| 7517702 | Method for making an electronic device including a poled superlattice having a net electrical dipole moment | Samed Halilov, Xiangyang Huang, Ilija Dukovski, Jean Augustin Chan Sow Fook Yiptong, Robert J. Mears +1 more | 2009-04-14 |
| 7446002 | Method for making a semiconductor device comprising a superlattice dielectric interface layer | Robert J. Mears, Scott A. Kreps, Robert John Stephenson, Jean Augustin Chan Sow Fook Yiptong, Ilija Dukovski +3 more | 2008-11-04 |
| 7435988 | Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2008-10-14 |
| 7303948 | Semiconductor device including MOSFET having band-engineered superlattice | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2007-12-04 |
| 7265002 | Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2007-09-04 |
| 7153763 | Method for making a semiconductor device including band-engineered superlattice using intermediate annealing | Robert John Stephenson, Scott A. Kreps | 2006-12-26 |
| 7071119 | Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2006-07-04 |
| 7033437 | Method for making semiconductor device including band-engineered superlattice | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2006-04-25 |
| 7034329 | Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2006-04-25 |
| 6958486 | Semiconductor device including band-engineered superlattice | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2005-10-25 |
| 6952018 | Semiconductor device including band-engineered superlattice | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2005-10-04 |
| 6927413 | Semiconductor device including band-engineered superlattice | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2005-08-09 |
| 6897472 | Semiconductor device including MOSFET having band-engineered superlattice | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2005-05-24 |
| 6891188 | Semiconductor device including band-engineered superlattice | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2005-05-10 |
| 6878576 | Method for making semiconductor device including band-engineered superlattice | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2005-04-12 |
| 6833294 | Method for making semiconductor device including band-engineered superlattice | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2004-12-21 |
| 6830964 | Method for making semiconductor device including band-engineered superlattice | Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Scott A. Kreps, Ilija Dukovski | 2004-12-14 |