SK

Scott A. Kreps

RM Rj Mears: 17 patents #2 of 12Top 20%
MT Mears Technologies: 9 patents #5 of 14Top 40%
AI Atomera Incorporated: 1 patents #18 of 20Top 90%
Overall (All Time): #146,016 of 4,157,543Top 4%
27
Patents All Time

Issued Patents All Time

Showing 1–25 of 27 patents

Patent #TitleCo-InventorsDate
10741436 Method for making a semiconductor device including non-monocrystalline stringer adjacent a superlattice-sti interface Robert John Stephenson, Robert J. Mears, Kalipatnam Vivek Rao 2020-08-11
7659539 Semiconductor device including a floating gate memory cell with a superlattice channel Kalipatnam Vivek Rao 2010-02-09
7612366 Semiconductor device including a strained superlattice layer above a stress layer Robert J. Mears 2009-11-03
7598515 Semiconductor device including a strained superlattice and overlying stress layer and related methods Robert J. Mears 2009-10-06
7586116 Semiconductor device having a semiconductor-on-insulator configuration and a superlattice Kalipatnam Vivek Rao 2009-09-08
7531828 Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions Robert J. Mears 2009-05-12
7446002 Method for making a semiconductor device comprising a superlattice dielectric interface layer Robert J. Mears, Marek Hytha, Robert John Stephenson, Jean Augustin Chan Sow Fook Yiptong, Ilija Dukovski +3 more 2008-11-04
7435988 Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2008-10-14
7436026 Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions 2008-10-14
7303948 Semiconductor device including MOSFET having band-engineered superlattice Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2007-12-04
7288457 Method for making semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions 2007-10-30
7279701 Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions 2007-10-09
7265002 Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2007-09-04
7202494 FINFET including a superlattice Richard A. Blanchard, Kalipatnam Vivek Rao 2007-04-10
7153763 Method for making a semiconductor device including band-engineered superlattice using intermediate annealing Marek Hytha, Robert John Stephenson 2006-12-26
7071119 Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2006-07-04
7033437 Method for making semiconductor device including band-engineered superlattice Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2006-04-25
7034329 Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2006-04-25
7018900 Method for making a semiconductor device comprising a superlattice channel vertically stepped above source and drain regions 2006-03-28
6958486 Semiconductor device including band-engineered superlattice Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2005-10-25
6952018 Semiconductor device including band-engineered superlattice Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2005-10-04
6927413 Semiconductor device including band-engineered superlattice Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2005-08-09
6897472 Semiconductor device including MOSFET having band-engineered superlattice Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2005-05-24
6891188 Semiconductor device including band-engineered superlattice Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2005-05-10
6878576 Method for making semiconductor device including band-engineered superlattice Robert J. Mears, Jean Augustin Chan Sow Fook Yiptong, Marek Hytha, Ilija Dukovski 2005-04-12