Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance

Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance

US Patent 10854717 · Granted Dec 1, 2020

Estimated economic value: $4,043,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device including a superlattice and enriched silicon 28 epitaxial 2025
Bipolar junction transistors including emitter-base and base-collector superlatt2025
Semiconductor device including a superlattice providing metal work function tuni2025
Radio frequency (RF) semiconductor devices including a ground plane layer having2025
Radio frequency (RF) semiconductor devices including a ground plane layer having2025
Method for making DMOS devices including a superlattice and field plate for drif2025
Method for making semiconductor device including a superlattice and enriched sil2025
Method for making semiconductor device including a superlattice and enriched sil2025
Method for making semiconductor device with selective etching of superlattice to2025
Method for making memory device including a superlattice gettering layer2025
DRAM sense amplifier architecture with reduced power consumption and related met2025
Semiconductor device including superlattice with O18 enriched monolayers2025