DM

Donald M. Mintz

Applied Materials: 10 patents #1,290 of 7,310Top 20%
VA Varian: 5 patents #46 of 684Top 7%
Overall (All Time): #327,920 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
6418960 Ultrasonic enhancement for solvent purge of a liquid delivery system Ted G. Yoshidome 2002-07-16
6162297 Embossed semiconductor fabrication parts Anantha K. Subramani, Lolita Sharp, David Datong Huo 2000-12-19
5849136 High frequency semiconductor wafer processing apparatus and method Hiroji Hanawa, Sasson Somekh, Dan Maydan, Kenneth S. Collins 1998-12-15
5762748 Lid and door for a vacuum chamber and pretreatment therefor Thomas Banholzer, Dan Marohl, Avi Tepman 1998-06-09
5618382 High-frequency semiconductor wafer processing apparatus and method Hiroji Hanawa, Sasson Somekh, Dan Maydan, Kenneth S. Collins 1997-04-08
5565058 Lid and door for a vacuum chamber and pretreatment therefor Thomas Banholzer, Dan Marohl, Avi Tepman 1996-10-15
5401319 Lid and door for a vacuum chamber and pretreatment therefor Thomas Banholzer, Dan Marohl, Avi Tepman 1995-03-28
5391275 Method for preparing a shield to reduce particles in a physical vapor deposition chamber 1995-02-21
5223457 High-frequency semiconductor wafer processing method using a negative self-bias Hiroji Hanawa, Sasson Someskh, Dan Maydan 1993-06-29
5202008 Method for preparing a shield to reduce particles in a physical vapor deposition chamber Humoyoun Talieh, Haim Gilboa 1993-04-13
4865712 Apparatus for manufacturing planarized aluminum films 1989-09-12
4661228 Apparatus and method for manufacturing planarized aluminum films 1987-04-28
4657654 Targets for magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges 1987-04-14
4627904 Magnetron sputter device having separate confining magnetic fields to separate targets and magnetically enhanced R.F. bias 1986-12-09
4595482 Apparatus for and the method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges 1986-06-17