SH

Shane Hollmer

AM AMD: 53 patents #124 of 9,279Top 2%
AT Adesto Technologies: 31 patents #1 of 52Top 2%
Fujitsu Limited: 10 patents #3,161 of 24,456Top 15%
EA Emosyn America: 3 patents #1 of 4Top 25%
AT Axon Technologies: 2 patents #4 of 15Top 30%
AT Adesto Technology: 2 patents #1 of 8Top 15%
MS Monolithic Power Systems: 1 patents #121 of 198Top 65%
ST Silicon Storage Technology: 1 patents #163 of 239Top 70%
📍 Grass Valley, CA: #1 of 334 inventorsTop 1%
🗺 California: #2,676 of 386,348 inventorsTop 1%
Overall (All Time): #17,589 of 4,157,543Top 1%
91
Patents All Time

Issued Patents All Time

Showing 51–75 of 91 patents

Patent #TitleCo-InventorsDate
6381163 Methods and apparatus for reading a CAM cell using boosted and regulated gate voltage Kazuhiro Kurihara 2002-04-30
6373742 Two side decoding of a memory array Kazuhiro Kurihara, Pau-Ling Chen 2002-04-16
6275414 Uniform bitline strapping of a non-volatile memory cell Mark Randolph, Pau-Ling Chen, Richard Fastow 2001-08-14
6272043 Apparatus and method of direct current sensing from source side in a virtual ground array 2001-08-07
6269025 Memory system having a program and erase voltage modifier Binh Quang Le, Pau-Ling Chen 2001-07-31
6266275 Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for nand array flash memory Paul L. Chen, Mike Van Buskirk, Binh Quang Le, Shoichi Kawamura, Chung-You Hu +3 more 2001-07-24
6262469 Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor Binh Quang Le, Pau-Ling Chen 2001-07-17
6240020 Method of bitline shielding in conjunction with a precharging scheme for nand-based flash memory devices Andrew Yang, Pau-Ling Chen 2001-05-29
6222768 Auto adjusting window placement scheme for an NROM virtual ground array Pau-Ling Chen 2001-04-24
6215702 Method of maintaining constant erasing speeds for non-volatile memory cells Narbeh Derhacobian, Ravi Sunkavalli 2001-04-10
6201737 Apparatus and method to characterize the threshold distribution in an NROM virtual ground array Kazuhiro Kurihara 2001-03-13
6185130 Programmable current source Joseph G. Pawletko 2001-02-06
6181605 Global erase/program verification apparatus and method Joseph G. Pawletko, Michael Chung 2001-01-30
6175523 Precharging mechanism and method for NAND-based flash memory devices Andrew Yang, Binh Quang Le 2001-01-16
6141244 Multi level sensing of NAND memory cells by external bias current Joseph G. Pawletko, Pau-Ling Chen 2000-10-31
6137153 Floating gate capacitor for use in voltage regulators Binh Quang Le, Pau-Ling Chen 2000-10-24
6117179 High voltage electrical rule check program Alexius H. Tan, Jonathan Su 2000-09-12
6081455 EEPROM decoder block having a p-well coupled to a charge pump for charging the p-well and method of programming with the EEPROM decoder block Binh Quang Le, Pau-Ling Chen 2000-06-27
6072725 Method of erasing floating gate capacitor used in voltage regulator Binh Quang Le, Pau-Ling Chen 2000-06-06
6055366 Methods and apparatus to perform high voltage electrical rule check of MOS circuit design Binh Quang Le, Pau-Ling Chen, Alexius H. Tan 2000-04-25
6009014 Erase verify scheme for NAND flash Chung-You Hu, Binh Quang Le, Pau-Ling Chen, Jonathan S. Su, Ravi Prakash Gutala +1 more 1999-12-28
6005804 Split voltage for NAND flash Binh Quang Le, Pau-Ling Chen 1999-12-21
5999452 Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for NAND array flash memory Pau-Ling Chen, Mike Van Buskirk, Binh Quang Le, Shoichi Kawamura, Chung-You Hu +3 more 1999-12-07
5995417 Scheme for page erase and erase verify in a non-volatile memory array Pau-Ling Chen, Michael Chung, Vincent Leung, Binh Quang Le, Masaru Yano 1999-11-30
5978267 Bit line biasing method to eliminate program disturbance in a non-volatile memory device and memory device employing the same Pau-Ling Chen, Michael A. Van Buskirk, Michael Chung, Binh Quang Le, Vincent Leung +2 more 1999-11-02