| 12156473 |
Inductor/core assemblies for integrated circuits |
Kevin Lin, Nicholas James Harold McKubre |
2024-11-26 |
| 12148757 |
Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material |
Nidhi Nidhi, Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Rahul Ramaswamy +2 more |
2024-11-19 |
| 12148747 |
Gallium nitride (GAN) three-dimensional integrated circuit technology |
Marko Radosavljevic, Pratik KOIRALA, Nicole K. Thomas, Paul B. Fischer, Adel A. Elsherbini +5 more |
2024-11-19 |
| 12148690 |
Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances |
Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner |
2024-11-19 |
| 12125888 |
Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
Marko Radosavljevic, Sansaptak Dasgupta |
2024-10-22 |
| 12107060 |
Microelectronic assemblies with inductors in direct bonding regions |
Adel A. Elsherbini, Zhiguo Qian, Gerald Pasdast, Mohammad Enamul Kabir, Kimin Jun +5 more |
2024-10-01 |
| 12080763 |
Silicide for group III-nitride devices and methods of fabrication |
Sansaptak Dasgupta, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez |
2024-09-03 |
| 12062631 |
Microelectronic assemblies with inductors in direct bonding regions |
Adel A. Elsherbini, Krishna Bharath, Kevin P. O'Brien, Kimin Jun, Mohammad Enamul Kabir +5 more |
2024-08-13 |
| 12034085 |
Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers |
Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more |
2024-07-09 |
| 12027613 |
III-N transistor arrangements for reducing nonlinearity of off-state capacitance |
Nidhi Nidhi, Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Rahul Ramaswamy +2 more |
2024-07-02 |
| 11942378 |
Tunnel polarization junction III-N transistors |
Marko Radosavljevic, Sansaptak Dasgupta |
2024-03-26 |
| 11894465 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2024-02-06 |
| 11881511 |
Superlattice FINFET with tunable drive current capability |
Nidhi Nidhi, Rahul Ramaswamy, Sansaptak Dasgupta, Marko Radosavljevic, Johann Christian Rode +2 more |
2024-01-23 |
