| 12148757 |
Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material |
Nidhi Nidhi, Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Rahul Ramaswamy +2 more |
2024-11-19 |
| 12148690 |
Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances |
Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner |
2024-11-19 |
| 12125888 |
Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
Marko Radosavljevic, Han Wui Then |
2024-10-22 |
| 12080763 |
Silicide for group III-nitride devices and methods of fabrication |
Marko Radosavljevic, Han Wui Then, Paul B. Fischer, Walid M. Hafez |
2024-09-03 |
| 12034085 |
Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers |
Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more |
2024-07-09 |
| 12027613 |
III-N transistor arrangements for reducing nonlinearity of off-state capacitance |
Nidhi Nidhi, Han Wui Then, Marko Radosavljevic, Paul B. Fischer, Rahul Ramaswamy +2 more |
2024-07-02 |
| 11942378 |
Tunnel polarization junction III-N transistors |
Han Wui Then, Marko Radosavljevic |
2024-03-26 |
| 11908687 |
III-N multichip modules and methods of fabrication |
Khaled Ahmed, Anup Pancholi, John Heck, Thomas L. Sounart, Harel Frish |
2024-02-20 |
| 11881511 |
Superlattice FINFET with tunable drive current capability |
Nidhi Nidhi, Rahul Ramaswamy, Han Wui Then, Marko Radosavljevic, Johann Christian Rode +2 more |
2024-01-23 |