Issued Patents 2023
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855211 | Method of manufacturing a semiconductor device and a semiconductor device | Shahaji B. More | 2023-12-26 |
| 11855208 | Method for forming fin field effect transistor (FinFET) device structure | Shahaji B. More, Cheng-Yi Peng, Yu-Ming Lin, Kuo-Feng Yu, Ziwei Fang | 2023-12-26 |
| 11855176 | FinFET structure with doped region | Shahaji B. More, Cheng-Yi Peng, Shih-Chieh Chang, Kuo-Feng Yu | 2023-12-26 |
| 11837507 | Gate structure and method of forming same | Shahaji B. More, Chandrashekhar Prakash Savant | 2023-12-05 |
| 11769817 | Method for forming source/drain contacts | Shahaji B. More, Shih-Chieh Chang, Kuo-Feng Yu, Cheng-Yi Peng | 2023-09-26 |
| 11764264 | LDD-free semiconductor structure and manufacturing method of the same | — | 2023-09-19 |
| 11764284 | Semiconductor device with reduced trap defect and method of forming the same | Kuo-Feng Yu, Yu-Ming Lin, Clement Hsingjen Wann | 2023-09-19 |
| 11742237 | Mechanism for FinFET well doping | Yan-Ting Lin, Clement Hsingjen Wann | 2023-08-29 |
| 11688648 | Gate structure of a semiconductor device and method of forming same | Shahaji B. More, Chandrashekhar Prakash Savant | 2023-06-27 |
| 11676867 | Method for manufacturing semiconductor structure | Cheng-Yi Peng, Ching-Hua Lee, Clement Hsingjen Wann, Yu-Ming Lin | 2023-06-13 |
| 11658230 | Method for forming a semiconductor structure including plasma cleaning operations | Ru-Shang Hsiao, Clement Hsingjen Wann | 2023-05-23 |
| 11652002 | Isolation structures for transistors | Shahaji B. More | 2023-05-16 |
| 11569387 | Semiconductor device including fin structures and manufacturing method thereof | Kei-Wei Chen | 2023-01-31 |
| 11557650 | Semiconductor device and manufacturing method thereof | Chih-Hsin Ko, Clement Hsing Jen Wann, Ya-Yun Cheng | 2023-01-17 |