Issued Patents 2023
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855208 | Method for forming fin field effect transistor (FinFET) device structure | Chun Hsiung Tsai, Shahaji B. More, Cheng-Yi Peng, Yu-Ming Lin, Ziwei Fang | 2023-12-26 |
| 11855176 | FinFET structure with doped region | Shahaji B. More, Chun Hsiung Tsai, Cheng-Yi Peng, Shih-Chieh Chang | 2023-12-26 |
| 11769817 | Method for forming source/drain contacts | Shahaji B. More, Chun Hsiung Tsai, Shih-Chieh Chang, Cheng-Yi Peng | 2023-09-26 |
| 11764284 | Semiconductor device with reduced trap defect and method of forming the same | Chun Hsiung Tsai, Yu-Ming Lin, Clement Hsingjen Wann | 2023-09-19 |
| 11735484 | Post gate dielectric processing for semiconductor device fabrication | Chih-Yu Hsu, Jian-Hao Chen, Chia-Wei Chen, Shan-Mei Liao, Hui-Chi Chen +4 more | 2023-08-22 |
| 11664279 | Multiple threshold voltage implementation through lanthanum incorporation | Wen-Hung Huang, Jian-Hao Chen, Shan-Mei Liao, Jer-Fu Wang, Yung-Hsiang Chan | 2023-05-30 |
| 11605563 | Semiconductor device with non-conformal gate dielectric layers | Yung-Hsiang Chan, Wen-Hung Huang, Shan-Mei Liao, Kuei-Lun Lin, Jian-Hao Chen | 2023-03-14 |
| 11605720 | Metal gate cap | Chia-Wei Chen, Wei-Cheng Hsu, Hui-Chi Chen, Jian-Hao Chen, Shih-Hang Chiu +2 more | 2023-03-14 |