Issued Patents 2023
Showing 1–25 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855211 | Method of manufacturing a semiconductor device and a semiconductor device | Chun Hsiung Tsai | 2023-12-26 |
| 11855208 | Method for forming fin field effect transistor (FinFET) device structure | Chun Hsiung Tsai, Cheng-Yi Peng, Yu-Ming Lin, Kuo-Feng Yu, Ziwei Fang | 2023-12-26 |
| 11855176 | FinFET structure with doped region | Chun Hsiung Tsai, Cheng-Yi Peng, Shih-Chieh Chang, Kuo-Feng Yu | 2023-12-26 |
| 11854904 | Different source/drain profiles for n-type FinFETs and p-type FinFETs | — | 2023-12-26 |
| 11854831 | Cleaning process for source/drain epitaxial structures | — | 2023-12-26 |
| 11837507 | Gate structure and method of forming same | Chandrashekhar Prakash Savant, Chun Hsiung Tsai | 2023-12-05 |
| 11830772 | FinFETs with epitaxy regions having mixed wavy and non-wavy portions | — | 2023-11-28 |
| 11830912 | Semiconductor device structure and methods of forming the same | — | 2023-11-28 |
| 11830721 | Semiconductor device and method | — | 2023-11-28 |
| 11817492 | Semiconductor device and method | Shih-Chieh Chang | 2023-11-14 |
| 11817500 | Method of manufacturing a semiconductor device and a semiconductor device | Chandrashekhar Prakash Savant | 2023-11-14 |
| 11817499 | P-type strained channel in a fin field effect transistor (FinFET) device | Huai-Tei Yang, Shih-Chieh Chang, Shu Kuan, Cheng-Han Lee | 2023-11-14 |
| 11784187 | Method of manufacturing semiconductor devices and semiconductor devices | Chandrashekhar Prakash Savant, Tien-Wei Yu, Chia-Ming Tsai | 2023-10-10 |
| 11777014 | Controlled doping in a gate dielectric layer | Chandrashekhar Prakash Savant | 2023-10-03 |
| 11776851 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Chih-Yu Ma, Zheng-Yang Pan, Shih-Chieh Chang, Cheng-Han Lee | 2023-10-03 |
| 11769817 | Method for forming source/drain contacts | Chun Hsiung Tsai, Shih-Chieh Chang, Kuo-Feng Yu, Cheng-Yi Peng | 2023-09-26 |
| 11764301 | FinFET device and method of forming same | Shih-Chieh Chang | 2023-09-19 |
| 11749566 | Inner filler layer for multi-patterned metal gate for nanostructure transistor | Chandrashekhar Prakash Savant | 2023-09-05 |
| 11721593 | Source/drain epitaxial structures for semiconductor devices | — | 2023-08-08 |
| 11705371 | Semiconductor devices having merged source/drain features and methods of fabrication thereof | Chung-Hsien Yeh, Chih-Yu Ma | 2023-07-18 |
| 11688648 | Gate structure of a semiconductor device and method of forming same | Chandrashekhar Prakash Savant, Chun Hsiung Tsai | 2023-06-27 |
| 11670681 | Method of forming fully strained channels | Shu Kuan, Cheng-Han Lee | 2023-06-06 |
| 11664424 | Device with epitaxial source/drain region | — | 2023-05-30 |
| 11658216 | Method and structure for metal gate boundary isolation | Chandrashekhar Prakash Savant | 2023-05-23 |
| 11652002 | Isolation structures for transistors | Chun Hsiung Tsai | 2023-05-16 |