Issued Patents 2023
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855176 | FinFET structure with doped region | Shahaji B. More, Chun Hsiung Tsai, Cheng-Yi Peng, Kuo-Feng Yu | 2023-12-26 |
| 11854811 | FinFET device and method of forming | Yi-Min Huang, Huai-Tei Yang | 2023-12-26 |
| 11817499 | P-type strained channel in a fin field effect transistor (FinFET) device | Shahaji B. More, Huai-Tei Yang, Shu Kuan, Cheng-Han Lee | 2023-11-14 |
| 11817492 | Semiconductor device and method | Shahaji B. More | 2023-11-14 |
| 11792923 | Storage device for flexible circuit packages and carrier thereof | Hui-Yu Huang, Chih-Ming Peng, Chun-Te Lee | 2023-10-17 |
| 11776851 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Cheng-Han Lee | 2023-10-03 |
| 11769817 | Method for forming source/drain contacts | Shahaji B. More, Chun Hsiung Tsai, Kuo-Feng Yu, Cheng-Yi Peng | 2023-09-26 |
| 11764301 | FinFET device and method of forming same | Shahaji B. More | 2023-09-19 |
| 11721760 | Dopant concentration boost in epitaxially formed material | Chih-Yu Ma, Zheng-Yang Pan, Cheng-Han Lee | 2023-08-08 |
| 11646231 | Semiconductor device and method | Shahaji B. More, Zheng-Yang Pan, Cheng-Han Lee | 2023-05-09 |
| 11626518 | FinFET device and methods of forming the same | Shahaji B. More, Cheng-Han Lee | 2023-04-11 |
| 11600703 | Germanium tin gate-all-around device | Shahaji B. More, Cheng-Han Lee, Shih-Ya Lin, Chung-En TSAI, Chee-Wee Liu | 2023-03-07 |
| 11569383 | Method of forming source/drain epitaxial stacks | Shahaji B. More, Huai-Tei Yang, Cheng-Han Lee | 2023-01-31 |
| 11545399 | FinFET EPI channels having different heights on a stepped substrate | Cheng-Han Lee, Chih-Yu Ma | 2023-01-03 |