Issued Patents 2023
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11817499 | P-type strained channel in a fin field effect transistor (FinFET) device | Shahaji B. More, Huai-Tei Yang, Shih-Chieh Chang, Shu Kuan | 2023-11-14 |
| 11776851 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang | 2023-10-03 |
| 11753432 | Compound with analgesic effect for use in prevention and treatment of pain | Chih-Cheng Chen, Jim-Min Fang, Jen-Yao Chang | 2023-09-12 |
| 11721760 | Dopant concentration boost in epitaxially formed material | Chih-Yu Ma, Zheng-Yang Pan, Shih-Chieh Chang | 2023-08-08 |
| 11670681 | Method of forming fully strained channels | Shahaji B. More, Shu Kuan | 2023-06-06 |
| 11662844 | Touch sensitive processing apparatus, method and electronic system | Shang-Tai Yeh | 2023-05-30 |
| 11646231 | Semiconductor device and method | Shahaji B. More, Zheng-Yang Pan, Shih-Chieh Chang | 2023-05-09 |
| 11626518 | FinFET device and methods of forming the same | Shahaji B. More, Shih-Chieh Chang | 2023-04-11 |
| 11600703 | Germanium tin gate-all-around device | Shahaji B. More, Shih-Chieh Chang, Shih-Ya Lin, Chung-En TSAI, Chee-Wee Liu | 2023-03-07 |
| 11581411 | Semiconductor device structure and methods of forming the same | Shahaji B. More, Jia-Ying Ma | 2023-02-14 |
| 11569383 | Method of forming source/drain epitaxial stacks | Shahaji B. More, Huai-Tei Yang, Shih-Chieh Chang | 2023-01-31 |
| 11545399 | FinFET EPI channels having different heights on a stepped substrate | Chih-Yu Ma, Shih-Chieh Chang | 2023-01-03 |
| 11545735 | Antenna structure and wireless communication device using same | Yi-Wen Hsu, Wei-Xuan Ye | 2023-01-03 |