NS

Noriyuki Sato

KC Kepler Computing: 27 patents #4 of 35Top 15%
IN Intel: 6 patents #350 of 4,378Top 8%
NT NTT: 2 patents #230 of 956Top 25%
OC Oike & Co.: 1 patents #1 of 1Top 100%
📍 Hillsboro, OR: #2 of 506 inventorsTop 1%
🗺 Oregon: #14 of 4,197 inventorsTop 1%
Overall (2023): #606 of 537,848Top 1%
36
Patents 2023

Issued Patents 2023

Showing 26–36 of 36 patents

Patent #TitleCo-InventorsDate
11696450 Common mode compensation for multi-element non-linear polar material based gain memory bit-cell Rajeev Kumar Dokania, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni 2023-07-04
11696451 Common mode compensation for non-linear polar material based 1T1C memory bit-cell Rajeev Kumar Dokania, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni 2023-07-04
11681386 Flexible decorative laminate sheet, module for touch panel, and touch panel 2023-06-20
11683939 Spin orbit memory devices with dual electrodes, and methods of fabrication Benjamin Buford, Angeline Smith, Tanay Gosavi, Kaan Oguz, Christopher J. Wiegand +5 more 2023-06-20
11630162 Line verification device, and line verification method Takaho Shibata, Tsuyoshi Nagai 2023-04-18
11626451 Magnetic memory device with ruthenium diffusion barrier Emily Walker, Carl Naylor, Kaan Oguz, Kevin Lin, Tanay Gosavi +6 more 2023-04-11
11605592 Method to fabricate metal and ferromagnetic metal multilayer interconnect line for skin effect suppression Kevin Lin, Kevin P. O'Brien, Hui Jae Yoo 2023-03-14
11605411 Method of forming stacked ferroelectric planar capacitors in a memory bit-cell Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more 2023-03-14
11594673 Two terminal spin orbit memory devices and methods of fabrication Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +8 more 2023-02-28
11557629 Spin orbit memory devices with reduced magnetic moment and methods of fabrication Kaan Oguz, Christopher J. Wiegand, Angeline Smith, Tanay Gosavi 2023-01-17
11545204 Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more 2023-01-03