Issued Patents 2023
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11804523 | High aspect ratio source or drain structures with abrupt dopant profile | Ryan Keech, Anand S. Murthy, Suresh Vishwanath, Mohammad HASAN, Biswajeet Guha +1 more | 2023-10-31 |
| 11756998 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel +4 more | 2023-09-12 |
| 11695081 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Sean T. Ma, Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy +4 more | 2023-07-04 |
| 11610889 | Arsenic-doped epitaxial, source/drain regions for NMOS | Anand S. Murthy, Ryan Keech, Ritesh Jhaveri | 2023-03-21 |
| 11557658 | Transistors with high density channel semiconductor over dielectric material | Gilbert Dewey, Sean T. Ma, Tahir Ghani, Willy Rachmady, Cheng-Ying Huang +3 more | 2023-01-17 |
| 11552169 | Source or drain structures with phosphorous and arsenic co-dopants | Anand S. Murthy, Ryan Keech, Suresh Vishwanath | 2023-01-10 |