Issued Patents 2022
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11443982 | Formation of trench silicide source or drain contacts without gate damage | Ruilong Xie, Laertis Economikos, Veeraraghavan S. Basker, Chanro Park, Hui Zang | 2022-09-13 |
| 11424367 | Wrap-around contacts including localized metal silicide | Eric R. Miller, Julien Frougier, Yann Mignot | 2022-08-23 |
| 11387319 | Nanosheet transistor device with bottom isolation | Ruilong Xie, Veeraraghavan S. Basker, Pietro Montanini | 2022-07-12 |
| 11315922 | Fin cut to prevent replacement gate collapse on STI | Balasubramanian Pranatharthiharan, Sivananda K. Kanakasabapathy, John R. Sporre | 2022-04-26 |
| 11309221 | Single metallization scheme for gate, source, and drain contact integration | Victor Chan, Gangadhara Raja Muthinti | 2022-04-19 |
| 11296226 | Transistor having wrap-around source/drain contacts and under-contact spacers | Yi Song, Praveen Joseph, Kangguo Cheng | 2022-04-05 |
| 11282962 | Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) | Huimei Zhou, Ruqiang Bao, Michael P. Belyansky, Gen Tsutsui | 2022-03-22 |
| 11282961 | Enhanced bottom dielectric isolation in gate-all-around devices | Julien Frougier, Ruilong Xie, Kangguo Cheng | 2022-03-22 |
| 11276767 | Additive core subtractive liner for metal cut etch processes | Ruqiang Bao, Kisup Chung, Sivananda K. Kanakasabapathy, David L. Rath, Indira Seshadri +1 more | 2022-03-15 |
| 11227923 | Wrap around contact process margin improvement with early contact cut | Ruilong Xie, Veeraraghavan S. Basker, Alexander Reznicek, Yao Yao | 2022-01-18 |