Issued Patents 2022
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11521968 | Channel structures with sub-fin dopant diffusion blocking layers | Cory Bomberger, Anand S. Murthy, Stephen M. Cea, Biswajeet Guha, Tahir Ghani | 2022-12-06 |
| 11495683 | Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material | Aaron D. Lilak, Patrick H. Keys, Sayed Hasan, Stephen M. Cea | 2022-11-08 |
| 11462536 | Integrated circuit structures having asymmetric source and drain structures | Rishabh Mehandru, Mark Bohr, Tahir Ghani | 2022-10-04 |
| 11456357 | Self-aligned gate edge architecture with alternate channel material | Biswajeet Guha, William Hsu, Szuya S. Liao, Mehmet O. Baykan, Tahir Ghani | 2022-09-27 |
| 11430868 | Buried etch-stop layer to help control transistor source/drain depth | Rishabh Mehandru, Biswajeet Guha, Anand S. Murthy, Tahir Ghani, Stephen M. Cea | 2022-08-30 |
| 11374100 | Source or drain structures with contact etch stop layer | Cory Bomberger, Rishabh Mehandru, Biswajeet Guha, Anand S. Murthy, Tahir Ghani | 2022-06-28 |
| 11251302 | Epitaxial oxide plug for strained transistors | Karthik Jambunathan, Biswajeet Guha, Anand S. Murthy, Tahir Ghani | 2022-02-15 |