Issued Patents 2021
Showing 1–25 of 53 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205698 | Multiple work function nanosheet transistors with inner spacer modulation | Takashi Ando, Ruilong Xie, Alexander Reznicek | 2021-12-21 |
| 11195764 | Vertical transport field-effect transistors having germanium channel surfaces | Choonghyun Lee, Takashi Ando | 2021-12-07 |
| 11189712 | Formation of vertical transport field-effect transistor structure having increased effective width | Ruilong Xie, Alexander Reznicek, Takashi Ando | 2021-11-30 |
| 11187672 | Superhydrophobic electrode and biosensing device using the same | Ali Afzali-Ardakani, Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek | 2021-11-30 |
| 11189661 | FinFET 2T2R RRAM | Alexander Reznicek, Takashi Ando, Choonghyun Lee, Jingyun Zhang | 2021-11-30 |
| 11189782 | Multilayered bottom electrode for MTJ-containing devices | Bruce B. Doris, Thitima Suwannasiri, Nathan P. Marchack | 2021-11-30 |
| 11183632 | Self-aligned edge passivation for robust resistive random access memory connection | Takashi Ando, Ruilong Xie, Alexander Reznicek | 2021-11-23 |
| 11165017 | Replacement bottom electrode structure process to form misalignment tolerate MRAM with high yield | Takashi Ando, Dimitri Houssameddine, Alexander Reznicek, Jingyun Zhang, Choonghyun Lee | 2021-11-02 |
| 11158715 | Vertical FET with asymmetric threshold voltage and channel thicknesses | Choonghyun Lee, Takashi Ando, Jingyun Zhang, Alexander Reznicek | 2021-10-26 |
| 11152563 | Reinforced single element bottom electrode for MTJ-containing devices | Bruce B. Doris, Eileen A. Galligan, Nathan P. Marchack | 2021-10-19 |
| 11152510 | Long channel optimization for gate-all-around transistors | Jingyun Zhang, Takashi Ando, Choonghyun Lee, Alexander Reznicek | 2021-10-19 |
| 11121311 | MTJ containing device encapsulation to prevent shorting | Nathan P. Marchack, Bruce B. Doris | 2021-09-14 |
| 11088139 | Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy | Choonghyun Lee, Jingyun Zhang, Takashi Ando, Alexander Reznicek | 2021-08-10 |
| 11088205 | High-density field-enhanced ReRAM integrated with vertical transistors | Takashi Ando, Alexander Reznicek | 2021-08-10 |
| 11075301 | Nanosheet with buried gate contact | Jingyun Zhang, Choonghyun Lee, Takashi Ando, Alexander Reznicek | 2021-07-27 |
| 11062955 | Vertical transistors having uniform channel length | Choonghyun Lee, Takashi Ando, Jingyun Zhang, Alexander Reznicek | 2021-07-13 |
| 11043587 | Fabrication of vertical fin transistor with multiple threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2021-06-22 |
| 11038103 | Tightly integrated 1T1R ReRAM for planar technology | Alexander Reznicek, Takashi Ando | 2021-06-15 |
| 11037832 | Threshold voltage adjustment by inner spacer material selection | Takashi Ando, Jingyun Zhang, Choonghyun Lee | 2021-06-15 |
| 11037986 | Stacked resistive memory with individual switch control | Takashi Ando, Jingyun Zhang, Alexander Reznicek, Choonghyun Lee | 2021-06-15 |
| 11031297 | Multiple gate length vertical field-effect-transistors | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2021-06-08 |
| 11024724 | Vertical FET with differential top spacer | Takashi Ando, Choonghyun Lee, Jingyun Zhang | 2021-06-01 |
| 11024740 | Asymmetric channel threshold voltage | Choonghyun Lee, Takashi Ando, Alexander Reznicek, Jingyun Zhang | 2021-06-01 |
| 11018254 | Fabrication of vertical fin transistor with multiple threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2021-05-25 |
| 11018062 | Multivalent oxide cap for multiple work function gate stacks on high mobility channel materials | Takashi Ando, Choonghyun Lee, Jingyun Zhang | 2021-05-25 |