Issued Patents 2020
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879629 | Method of electroplating metal into recessed feature and electroplating layer in recessed feature | Jun-Nan Nian, Jyun-Ru Wu, Yu-Ren PENG, Chi-Cheng Hung, Yu-Sheng Wang | 2020-12-29 |
| 10868063 | Surface treatment for BSI image sensors | Chin-Nan Wu, Chun Che Lin | 2020-12-15 |
| 10861701 | Semiconductor device and manufacturing method thereof | Jia-Ming Lin, Chun Che Lin | 2020-12-08 |
| 10854508 | Interconnection structure and manufacturing method thereof | Chung-Wen Wu, Chien-Wen Chiu, Chien-Chung Chen | 2020-12-01 |
| 10854713 | Method for forming trench structure of semiconductor device | Jia-Ming Lin, Chun Che Lin, Ying-Lang Wang, Wei-Ken Lin, Chuan-Pu Liu | 2020-12-01 |
| 10840184 | Formation of copper layer structure with self anneal strain improvement | Jun-Nan Nian, Chi-Cheng Hung, Yu-Sheng Wang, Hung-Hsu Chen | 2020-11-17 |
| 10832974 | FinFET gate structure and method for fabricating the same | Chi-Cheng Hung, Horng-Huei Tseng | 2020-11-10 |
| 10832959 | FinFET gate structure and method for fabricating the same | Ren-Hau Yu, Chi-Cherng Jeng | 2020-11-10 |
| 10818558 | Semiconductor structure having trench and manufacturing method thereof | Chen Cheng Chou, Cheng-Ta Wu | 2020-10-27 |
| 10818716 | Image sensor device and fabricating method thereof | Chih-Nan Wu, Chun Che Lin, Yu-Ku Lin | 2020-10-27 |
| 10818555 | Semiconductor device having planar transistor and FinFET | Wei-Barn Chen, Ting-Huang Kuo, Chi-Cherng Jeng, Kuang-Yao Lo | 2020-10-27 |
| 10797176 | Selective growth for high-aspect ratio metal fill | Chih-Nan Wu, Chun Che Lin, Wen-Cheng Hsuku | 2020-10-06 |
| 10797094 | Mechanisms for forming image sensor device | Volume Chien, Yun-Wei Cheng, Zhe-Ju Liu, Kuo-Cheng Lee, Chi-Cherng Jeng | 2020-10-06 |
| 10749278 | Method of electroplating metal into recessed feature and electroplating layer in recessed feature | Jun-Nan Nian, Jyun-Ru Wu, Yu-Ren PENG, Chi-Cheng Hung, Yu-Sheng Wang | 2020-08-18 |
| 10727137 | Structure and formation method of fin-like field effect transistor | Tzu kai Lin, Chi-Cherng Jeng | 2020-07-28 |
| 10720386 | Etch stop layer in integrated circuits | Tsung-Hsuan Hong, Chun Che Lin, Chih-Nan Wu | 2020-07-21 |
| 10672909 | Strained gate semiconductor device having an interlayer dielectric doped with oxygen and a large species material | Cheng-Ta Wu, Chii-Ming Wu, Kun-Tzu Lin, Lan Chang | 2020-06-02 |
| 10658186 | Method of forming semiconductor device using titanium-containing layer and device formed | Chia-Yang Wu, Keng-Chuan Chang, Ting-Siang Su | 2020-05-19 |
| 10658252 | Semiconductor structure and method for forming the same | Jia-Ming Lin, Wei-Ken Lin, Chun Che Lin | 2020-05-19 |
| 10629708 | Semiconductor device structure with barrier layer and method for forming the same | Chia-Yang Wu, Ting-Chun Wang, Yung-Si Yu | 2020-04-21 |
| 10573749 | Fin-type field effect transistor structure and manufacturing method thereof | Chun Hsiung Tsai, Ziwei Fang, Kei-Wei Chen, Huai-Tei Yang, Ying-Lang Wang | 2020-02-25 |
| 10535694 | Support structure for integrated circuitry | Volume Chien, Yun-Wei Cheng, I-I Cheng, Chi-Cherng Jeng, Chih-Mu Huang | 2020-01-14 |
| 10529863 | Flat STI surface for gate oxide uniformity in Fin FET devices | Cheng-Ta Wu, Cheng-Wei Chen, Ting-Chun Wang | 2020-01-07 |