Issued Patents 2020
Showing 26–48 of 48 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10707136 | Gallium nitride NMOS on Si (111) co-integrated with a silicon PMOS | Marko Radosavljevic, Sansaptak Dasgupta, Valluri Rao | 2020-07-07 |
| 10700665 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters | Sansaptak Dasgupta, Marko Radosavljevic | 2020-06-30 |
| 10692839 | GaN devices on engineered silicon substrates | Sansaptak Dasgupta, Marko Radosavljevic, Peter G. Tolchinsky, Robert S. Chau | 2020-06-23 |
| 10672884 | Schottky diodes on semipolar planes of group III-N material structures | Sansaptak Dasgupta, Marko Radosavljevic, Paul B. Fischer | 2020-06-02 |
| 10673405 | Film bulk acoustic resonator (FBAR) devices with 2DEG bottom electrode | Sansaptak Dasgupta, Marko Radosavljevic, Bruce A. Block, Paul B. Fischer | 2020-06-02 |
| 10665707 | Techniques for co-integrating transition metal dichalcogenide (TMDC)-based and III-N semiconductor-based transistor devices | Sansaptak Dasgupta, Marko Radosavljevic | 2020-05-26 |
| 10665708 | Semiconductor devices with raised doped crystalline structures | Marko Radosavljevic, Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau | 2020-05-26 |
| 10665577 | Co-integrated III-N voltage regulator and RF power amplifier for envelope tracking systems | Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner | 2020-05-26 |
| 10658475 | Transistors with vertically opposed source and drain metal interconnect layers | Sansaptak Dasgupta, Marko Radosavljevic, Paul B. Fischer | 2020-05-19 |
| 10658502 | Vertical III-N transistors with lateral overgrowth over a protruding III-N semiconductor structure | Sansaptak Dasgupta, Marko Radosavljevic | 2020-05-19 |
| 10658487 | Semiconductor devices having ruthenium phosphorus thin films | Scott B. Clendenning, John J. Plombon, Michael L. McSwiney | 2020-05-19 |
| 10658471 | Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layers | Sansaptak Dasgupta, Marko Radosavljevic, Niloy Mukherjee, Ravi Pillarisetty | 2020-05-19 |
| 10622448 | Transistors including retracted raised source/drain to reduce parasitic capacitances | Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung | 2020-04-14 |
| 10615280 | Reduced punchthrough breakdown in gallium-nitride transistors | Mark Armstrong | 2020-04-07 |
| 10600787 | Silicon PMOS with gallium nitride NMOS for voltage regulation | Sansaptak Dasgupta, Marko Radosavljevic, Peter G. Tolchinsky, Roza Kotlyar, Valluri Rao | 2020-03-24 |
| 10586866 | Stressors for compressively strained GaN p-channel | Sansaptak Dasgupta, Marko Radosavljevic | 2020-03-10 |
| 10580895 | Wide band gap transistors on non-native semiconductor substrates | Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more | 2020-03-03 |
| 10573647 | CMOS circuits using n-channel and p-channel gallium nitride transistors | Sansaptak Dasgupta, Marko Radosavljevic, Robert S. Chau | 2020-02-25 |
| 10574187 | Envelope-tracking control techniques for highly-efficient RF power amplifiers | Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner | 2020-02-25 |
| 10553689 | Multiple stacked field-plated GaN transistor and interlayer dielectrics to improve breakdown voltage and reduce parasitic capacitances | Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung | 2020-02-04 |
| 10546927 | Self-aligned transistor structures enabling ultra-short channel lengths | Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung | 2020-01-28 |
| 10541305 | Group III-N nanowire transistors | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2020-01-21 |
| 10535777 | Nanoribbon structures with recessed source-drain epitaxy | Marko Radosavljevic, Sansaptak Dasgupta | 2020-01-14 |