Issued Patents 2019
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10497711 | Non-volatile memory with reduced program speed variation | Ashish Baraskar, Liang Pang, Raghuveer S. Makala, Yingda Dong | 2019-12-03 |
| 10475804 | Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the same | Masatoshi Nishikawa, Shinsuke Yada | 2019-11-12 |
| 10461163 | Three-dimensional memory device with thickened word lines in terrace region and method of making thereof | Senaka Kanakamedala, Yoshihiro Kanno, Raghuveer S. Makala, Jin Liu, Murshed Chowdhury +1 more | 2019-10-29 |
| 10453854 | Three-dimensional memory device with thickened word lines in terrace region | Yoshihiro Kanno, Senaka Kanakamedala, Raghuveer S. Makala, Jin Liu, Murshed Chowdhury | 2019-10-22 |
| 10438964 | Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof | Raghuveer S. Makala, Senaka Kanakamedala, Yao-Sheng Lee | 2019-10-08 |
| 10381376 | Three-dimensional flat NAND memory device including concave word lines and method of making the same | Masatoshi Nishikawa, Xiaolong Hu | 2019-08-13 |
| 10381364 | Three-dimensional memory device including vertically offset drain select level layers and method of making thereof | Fei Zhou, Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala | 2019-08-13 |
| 10373969 | Three-dimensional memory device including partially surrounding select gates and fringe field assisted programming thereof | Peng Zhang, Johann Alsmeier, Yingda Dong | 2019-08-06 |
| 10355015 | Three-dimensional NAND memory device with common bit line for multiple NAND strings in each memory block | James Kai, Johann Alsmeier | 2019-07-16 |
| 10355007 | Three-dimensional memory structure having a back gate electrode | Xiying Costa, Dana Lee, Johann Alsmeier, Yingda Dong, Akira Matsudaira | 2019-07-16 |
| 10290643 | Three-dimensional memory device containing floating gate select transistor | James Kai, Johann Alsmeier, Peng Zhang | 2019-05-14 |
| 10262599 | Display backlight brightness adjustment | John Lang, Yunhui Chu, Zhiming Zhuang | 2019-04-16 |
| 10256248 | Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereof | Zhenyu Lu, Jixin Yu, Johann Alsmeier, Fumiaki Toyama, Yuki Mizutani +5 more | 2019-04-09 |
| 10236300 | On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same | Masanori Tsutsumi, Shinsuke Yada, Sayako Nagamine, Johann Alsmeier | 2019-03-19 |
| 10224104 | Three dimensional NAND memory device with common bit line for multiple NAND strings in each memory block | Murshed Chowdhury, Jin Liu, Andrew Lin, Raghuveer S. Makala, Johann Alsmeier | 2019-03-05 |
| 10224407 | High voltage field effect transistor with laterally extended gate dielectric and method of making thereof | Murshed Chowdhury, Andrew Lin, James Kai, Johann Alsmeier | 2019-03-05 |
| 10217746 | Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same | Tae Kyung Kim, Raghuveer S. Makala, Hiroyuki Kinoshita, Daxin Mao, Jixin Yu +5 more | 2019-02-26 |
| 10192878 | Three-dimensional memory device with self-aligned multi-level drain select gate electrodes | Masanori Tsutsumi, Shinsuke Yada | 2019-01-29 |