| 10497711 |
Non-volatile memory with reduced program speed variation |
Ashish Baraskar, Liang Pang, Yanli Zhang, Yingda Dong |
2019-12-03 |
$50,000 |
| 10468596 |
Damascene process for forming three-dimensional cross rail phase change memory devices |
Senaka Kanakamedala, Yao-Sheng Lee |
2019-11-05 |
$50,000 |
| 10461163 |
Three-dimensional memory device with thickened word lines in terrace region and method of making thereof |
Senaka Kanakamedala, Yoshihiro Kanno, Yanli Zhang, Jin Liu, Murshed Chowdhury +1 more |
2019-10-29 |
$46,000 |
| 10453854 |
Three-dimensional memory device with thickened word lines in terrace region |
Yoshihiro Kanno, Senaka Kanakamedala, Yanli Zhang, Jin Liu, Murshed Chowdhury |
2019-10-22 |
$72,000 |
| 10438964 |
Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof |
Senaka Kanakamedala, Yanli Zhang, Yao-Sheng Lee |
2019-10-08 |
$91,000 |
| 10381559 |
Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same |
Fei Zhou, Christopher J. Petti, Rahul Sharangpani, Adarsh Rajashekhar, Seung-Yeul Yang |
2019-08-13 |
$27,000 |
| 10381409 |
Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same |
Fei Zhou, Christopher J. Petti, Rahul Sharangpani, Adarsh Rajashekhar, Seung-Yeul Yang |
2019-08-13 |
$27,000 |
| 10381364 |
Three-dimensional memory device including vertically offset drain select level layers and method of making thereof |
Fei Zhou, Rahul Sharangpani, Yanli Zhang, Senaka Kanakamedala |
2019-08-13 |
$27,000 |
| 10361213 |
Three dimensional memory device containing multilayer wordline barrier films and method of making thereof |
Rahul Sharangpani, Fumitaka Amano, Fei Zhou, Keerti Shukla |
2019-07-23 |
|
| 10355139 |
Three-dimensional memory device with amorphous barrier layer and method of making thereof |
Rahul Sharangpani, Keerti Shukla, Fei Zhou, Somesh Peri |
2019-07-16 |
|
| 10355012 |
Multi-tier three-dimensional memory device with stress compensation structures and method of making thereof |
Seiji Shimabukuro |
2019-07-16 |
|
| 10290648 |
Three-dimensional memory device containing air gap rails and method of making thereof |
Fei Zhou, Rahul Sharangpani, Adarsh Rajashekhar |
2019-05-14 |
|
| 10290652 |
Three-dimensional memory device with graded word lines and methods of making the same |
Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar |
2019-05-14 |
|
| 10283513 |
Three-dimensional memory device with annular blocking dielectrics and method of making thereof |
Fei Zhou, Rahul Sharangpani, Adarsh Rajashekhar |
2019-05-07 |
|
| 10276583 |
Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof |
Rahul Sharangpani, Fumitaka Amano, Adarsh Rajashekhar, Fei Zhou |
2019-04-30 |
|
| 10262945 |
Three-dimensional array device having a metal containing barrier and method of making thereof |
Murshed Chowdhury, Keerti Shukla, Tomohisa Abe, Yao-Sheng Lee, James Kai |
2019-04-16 |
|
| 10256247 |
Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof |
Senaka Kanakamedala, Yao-Sheng Lee |
2019-04-09 |
|
| 10224104 |
Three dimensional NAND memory device with common bit line for multiple NAND strings in each memory block |
Murshed Chowdhury, Jin Liu, Yanli Zhang, Andrew Lin, Johann Alsmeier |
2019-03-05 |
|
| 10217746 |
Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same |
Tae Kyung Kim, Yanli Zhang, Hiroyuki Kinoshita, Daxin Mao, Jixin Yu +5 more |
2019-02-26 |
|
| 10199434 |
Three-dimensional cross rail phase change memory device and method of manufacturing the same |
Yao-Sheng Lee, Senaka Kanakamedala |
2019-02-05 |
|