Issued Patents 2019
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10515897 | Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same | Masatoshi Nishikawa, Akio Nishida, Takahito Fujita, Kiyokazu Shishido, Hiroyuki Ogawa | 2019-12-24 |
| 10490569 | Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings | Mitsuteru Mushiga, Hisakazu Otoi, Kensuke Yamaguchi, James Kai, Zhixin Cui +2 more | 2019-11-26 |
| 10490568 | Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof | James Kai, Jin Liu, Johann Alsmeier | 2019-11-26 |
| 10461163 | Three-dimensional memory device with thickened word lines in terrace region and method of making thereof | Senaka Kanakamedala, Yoshihiro Kanno, Raghuveer S. Makala, Yanli Zhang, Jin Liu +1 more | 2019-10-29 |
| 10453854 | Three-dimensional memory device with thickened word lines in terrace region | Yoshihiro Kanno, Senaka Kanakamedala, Raghuveer S. Makala, Yanli Zhang, Jin Liu | 2019-10-22 |
| 10388666 | Concurrent formation of memory openings and contact openings for a three-dimensional memory device | James Kai, Zhixin Cui, Johann Alsmeier, Tong Zhang | 2019-08-20 |
| 10355009 | Concurrent formation of memory openings and contact openings for a three-dimensional memory device | James Kai, Zhixin Cui, Johann Alsmeier, Tong Zhang | 2019-07-16 |
| 10262945 | Three-dimensional array device having a metal containing barrier and method of making thereof | Raghuveer S. Makala, Keerti Shukla, Tomohisa Abe, Yao-Sheng Lee, James Kai | 2019-04-16 |
| 10224104 | Three dimensional NAND memory device with common bit line for multiple NAND strings in each memory block | Jin Liu, Yanli Zhang, Andrew Lin, Raghuveer S. Makala, Johann Alsmeier | 2019-03-05 |
| 10224407 | High voltage field effect transistor with laterally extended gate dielectric and method of making thereof | Andrew Lin, James Kai, Yanli Zhang, Johann Alsmeier | 2019-03-05 |