| 10522232 |
Memory device with vpass step to reduce hot carrier injection type of program disturb |
Hong-Yan Chen |
2019-12-31 |
| 10497711 |
Non-volatile memory with reduced program speed variation |
Ashish Baraskar, Liang Pang, Yanli Zhang, Raghuveer S. Makala |
2019-12-03 |
| 10461095 |
Ferroelectric non-volatile memory |
Yangyin Chen, Yukihiro Sakotsubo |
2019-10-29 |
| 10453862 |
Ferroelectric non-volatile memory |
Yangyin Chen, Yukihiro Sakotsubo |
2019-10-22 |
| 10453861 |
Ferroelectric non-volatile memory |
Yangyin Chen, Yukihiro Sakotsubo |
2019-10-22 |
| 10446244 |
Adjusting voltage on adjacent word line during verify of memory cells on selected word line in multi-pass programming |
Vinh Diep, Ching-Huang Lu, Zhengyi Zhang |
2019-10-15 |
| 10438671 |
Reducing program disturb by modifying word line voltages at interface in two-tier stack during programming |
Hong-Yan Chen |
2019-10-08 |
| 10431313 |
Grouping memory cells into sub-blocks for program speed uniformity |
Zhengyi Zhang, James Kai, Johann Alsmeier |
2019-10-01 |
| 10424387 |
Reducing widening of threshold voltage distributions in a memory device due to temperature change |
Zhengyi Zhang |
2019-09-24 |
| 10373969 |
Three-dimensional memory device including partially surrounding select gates and fringe field assisted programming thereof |
Yanli Zhang, Peng Zhang, Johann Alsmeier |
2019-08-06 |
| 10355007 |
Three-dimensional memory structure having a back gate electrode |
Xiying Costa, Dana Lee, Yanli Zhang, Johann Alsmeier, Akira Matsudaira |
2019-07-16 |
| 10297330 |
Separate drain-side dummy word lines within a block to reduce program disturb |
Zhengyi Zhang, Henry Chin |
2019-05-21 |
| 10297329 |
NAND boosting using dynamic ramping of word line voltages |
Peter Rabkin, Masaaki Higashitani |
2019-05-21 |
| 10297323 |
Reducing disturbs with delayed ramp up of dummy word line after pre-charge during programming |
Xuehong Yu |
2019-05-21 |
| 10283202 |
Reducing disturbs with delayed ramp up of selected word line voltage after pre-charge during programming |
Hong-Yan Chen |
2019-05-07 |
| 10269435 |
Reducing program disturb by modifying word line voltages at interface in two-tier stack after program-verify |
Hong-Yan Chen |
2019-04-23 |
| 10249372 |
Reducing hot electron injection type of read disturb in 3D memory device during signal switching transients |
Hong-Yan Chen, Wei Zhao, Ching-Huang Lu |
2019-04-02 |
| 10217762 |
Doping channels of edge cells to provide uniform programming speed and reduce read disturb |
Xuehong Yu |
2019-02-26 |
| 10217518 |
Reducing hot electron injection type of read disturb in 3D memory device having connected source-end select gates |
Hong-Yan Chen |
2019-02-26 |
| 10210941 |
Reducing injection type of read disturb in a cold read of a memory device |
Hong-Yan Chen |
2019-02-19 |
| 10204689 |
Non-volatile memory with methods to reduce creep-up field between dummy control gate and select gate |
Ching-Huang Lu, Anubhav Khandelwal, Changyuan Chen, Cynthia Hsu |
2019-02-12 |