Issued Patents 2019
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522232 | Memory device with vpass step to reduce hot carrier injection type of program disturb | Yingda Dong | 2019-12-31 |
| 10438671 | Reducing program disturb by modifying word line voltages at interface in two-tier stack during programming | Yingda Dong | 2019-10-08 |
| 10283202 | Reducing disturbs with delayed ramp up of selected word line voltage after pre-charge during programming | Yingda Dong | 2019-05-07 |
| 10269435 | Reducing program disturb by modifying word line voltages at interface in two-tier stack after program-verify | Yingda Dong | 2019-04-23 |
| 10249372 | Reducing hot electron injection type of read disturb in 3D memory device during signal switching transients | Wei Zhao, Ching-Huang Lu, Yingda Dong | 2019-04-02 |
| 10217518 | Reducing hot electron injection type of read disturb in 3D memory device having connected source-end select gates | Yingda Dong | 2019-02-26 |
| 10210941 | Reducing injection type of read disturb in a cold read of a memory device | Yingda Dong | 2019-02-19 |