| 10504799 |
Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap |
Takashi Ando, Martin M. Frank, Renee T. Mo |
2019-12-10 |
| 10423805 |
Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology |
Richard H. Boivie, Eduard A. Cartier, Daniel J. Friedman, Kohji Hosokawa, Charanjit Singh Jutla +10 more |
2019-09-24 |
| 10396076 |
Structure and method for multiple threshold voltage definition in advanced CMOS device technology |
Hemanth Jagannathan |
2019-08-27 |
| 10396077 |
Patterned gate dielectrics for III-V-based CMOS circuits |
Takashi Ando, Martin M. Frank, Renee T. Mo, John Rozen |
2019-08-27 |
| 10381431 |
Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end |
Martin M. Frank, Takashi Ando, Xiao Sun, Jin-Ping Han |
2019-08-13 |
| 10361281 |
Method to improve reliability of replacement gate device |
Takashi Ando, Eduard A. Cartier, Kisik Choi |
2019-07-23 |
| 10332957 |
Stacked capacitor with symmetric leakage and break-down behaviors |
Takashi Ando, Eduard A. Cartier, Adam M. Pyzyna |
2019-06-25 |
| 10332883 |
Integrated metal gate CMOS devices |
Ruqiang Bao, Dechao Guo |
2019-06-25 |
| 10319818 |
Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end |
Martin M. Frank, Takashi Ando, Xiao Sun, Jin-Ping Han |
2019-06-11 |
| 10312157 |
Field effect transistor stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2019-06-04 |
| 10304936 |
Protection of high-K dielectric during reliability anneal on nanosheet structures |
Nicolas Loubet, Sanjay C. Mehta, Muthumanickam Sankarapandian |
2019-05-28 |
| 10297671 |
Uniform threshold voltage for nanosheet devices |
Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee, Koji Watanabe |
2019-05-21 |
| 10297598 |
Formation of full metal gate to suppress interficial layer growth |
Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Choonghyun Lee |
2019-05-21 |
| 10283610 |
Binary metal oxide based interlayer for high mobility channels |
Yohei Ogawa, John Rozen |
2019-05-07 |
| 10270029 |
Resistive switching memory stack for three-dimensional structure |
Takashi Ando, John Rozen |
2019-04-23 |
| 10262999 |
High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material |
Takashi Ando, Martin M. Frank, Pranita Kerber |
2019-04-16 |
| 10249543 |
Field effect transistor stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2019-04-02 |
| 10249540 |
Dual channel CMOS having common gate stacks |
Takashi Ando, Hemanth Jagannathan, Choonghyun Lee |
2019-04-02 |
| 10243055 |
Shared metal gate stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2019-03-26 |
| 10229856 |
Dual channel CMOS having common gate stacks |
Takashi Ando, Hemanth Jagannathan, Choonghyun Lee |
2019-03-12 |
| 10217834 |
Binary metal oxide based interlayer for high mobility channels |
Yohei Ogawa, John Rozen |
2019-02-26 |
| 10217835 |
Binary metal oxide based interlayer for high mobility channels |
Yohei Ogawa, John Rozen |
2019-02-26 |
| 10217745 |
High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material |
Takashi Ando, Martin M. Frank, Pranita Kerber |
2019-02-26 |
